IXDP20N60B IXYS, IXDP20N60B Datasheet
IXDP20N60B
Specifications of IXDP20N60B
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IXDP20N60B Summary of contents
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... Symbol Conditions (BR)CES 0.4 mA GE(th CES CE CES ± GES CE(sat © 2002 IXYS All rights reserved IXDP 20N60 B IXDP 20N60 BD1 IXDP 20N60B IXDP 20N60B D1 Maximum Ratings 600 = 20 kW 600 GE ±20 ± < V CEK CES = 125° 140 50 -55 ... +150 -40 ... +150 300 0 ...
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... -di /dt = 400 A/µ 125° -di /dt = 100 A/µ thJC © 2002 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 800 480 125°C J 260 55 0.9 0.4 0.5 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
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... GE A 15V 13V Fig. 1 Typ. output characteristics 125° 25° Fig. 3 Typ. transfer characteristics Fig. 5 Typ. turn on gate charge © 2002 IXYS All rights reserved 11V 25° 20V 480V 15A 100 Q G IXDP 20N60 B IXDP 20N60 BD1 17V GE A 15V 13V ...
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... Fig. 9 Typ. turn on energy and switching times versus gate resistor 125° 100 200 300 400 500 600 700 Fig. 11 Reverse biased safe operating area RBSOA © 2002 IXYS All rights reserved off 50 t d(on 1. off 0.50 ...