IXDP20N60B IXYS, IXDP20N60B Datasheet - Page 3

• Manufacturer Part Number: IXDP20N60B
• Description: IGBT 600V 32A W/DIODE TO-220AB
• Manufacturer: IXYS

Specifications of IXDP20N60B

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 20A
• Current - Collector (ic) (max): 32A
• Power - Max: 140W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 32
• Ic90, Tc=90°c, Igbt, (a): 20
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.8
• Tfi, Typ, Igbt, (ns): 55
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.4
• Rthjc, Max, Igbt, (°c/w): 0.90
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2002 IXYS All rights reserved
I
I
V
C
C
GE
40
30
20
10
40
30
20
10
15
12
A
A
V
0
0
9
6
3
0
0
3
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5 Typ. turn on gate charge
4
T
20
1
J
= 125°C
5
V
GE
40
2
= 17V
6
15V
13V
T
J
= 25°C
7
60
3
V
V
CE
GE
8
11V
Q
G
V
I
C
80
V
4
CE
T
CE
J
= 480V
= 15A
9
= 25°C
= 20V
9V
nC
V
V
100
10
5
I
I
C
RM
I
40
30
20
10
30
25
20
15
10
F
A
A
0
5
0
40
30
20
10
0
A
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics of
Fig. 6 Typ. turn off characteristics of
0
t
rr
200
1
free wheeling diode
free wheeling diode
400
1
2
V
T
GE
J
= 125°C
= 17V
IXDP 20N60 B
IXDP 20N60 BD1
15V
13V
600
3
-di/dt
V
V
CE
F
2
T
V
I
F
J
R
T
= 125°C
= 10A
800
= 300V
J
4
A/
= 125°C
m
11V
T
s
J
IXDP20N06B
V
V
I
= 25°C
RM
9V
1000
5
120
80
40
0
3
ns
3 - 4
t
rr