IXGH20N60B IXYS, IXGH20N60B Datasheet
IXGH20N60B
Specifications of IXGH20N60B
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IXGH20N60B Summary of contents
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... V = 0.8 • V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH 20N60B IXGT 20N60B Maximum Ratings 600 = 1 MW 600 GE ±20 ± 0.8 V CES 150 -55 ... +150 150 -55 ... +150 300 1 ...
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... L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGH 20N60B IXGT 20N60B TO-247 AD (IXGH) Outline ...
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... 125° Volts CE Fig. 3. High Temperature Output Characteristics 100 V = 10V 125° 25° Volts GE Fig. 5. Admittance Curves © 2000 IXYS All rights reserved 13V 11V 15V 13V 11V IXGH 20N60B IXGT 20N60B 200 T = 25° 160 120 Volts CE Fig. 2. Extended Output Characteristics 1 ...
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... nanocoulombs g Fig. 9. Gate Charge 1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 Single pulse 0.001 0.00001 0.0001 Fig. 11. IGBT Transient Thermal Resistance Junction-to-Case © 2000 IXYS All rights reserved Fig. 8. Dependence of E OFF C 100 0.1 80 100 0 Fig. 10. Turn-off Safe Operating Area ...