IXGH32N90B2D1 IXYS, IXGH32N90B2D1 Datasheet

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IXGH32N90B2D1

Manufacturer Part Number
IXGH32N90B2D1
Description
IGBT 900V 64A FRD TO-247
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet

Specifications of IXGH32N90B2D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
900V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 32A
Current - Collector (ic) (max)
64A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Vces, (v)
900
Ic25, Tc=25°c, Igbt, (a)
64
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
32
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
165
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.25
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
27
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH32N90B2D1
Manufacturer:
IXYS
Quantity:
18 000
HiPerFAST
with Fast Diode
B2-Class
High Speed IGBTs with
Ultrafast Diode
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
V
I
I
V
C25
C110
CM
GES
CES
J
JM
stg
© 2005 IXYS All rights reserved
CGR
GEM
C
GE(th)
CE(sat)
CES
GES
d
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load: V
T
Mounting torque (TO-247)
Test Conditions
I
V
V
V
I
C
C
C
C
C
C
J
J
GE
CE
GE
CE
= 250 mA, V
= I
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= V
= 0 V
= 0 V, V
C110
, V
CES
GE
TM
GE
VJ
= 15 V
CE
= 125°C, R
= ± 20 V
= V
IGBT
GE
GE
= 1 MW
G
CL
Advance Technical Information
= 10 Ω
T
T
<
J
J
(T
= 150°C
= 125°C
600V
J
= 25°C unless otherwise specified)
IXGH 32N90B2D1
IXGT 32N90B2D1
TO-247
TO-268
min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
2.2
2.1
I
CM
1.13/10Nm/lb.in.
= 64
900
900
±20
±30
200
300
150
300
64
32
± 100
max.
6
4
300
5.0
1.5
2.7
mA
μA
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
g
g
V
V
V
TO-247 (IXGH)
TO-268 (IXGT)
G = Gate
E = Emitter
Features
Applications
Advantages
High frequency IGBT
MOS Gate turn-on
- drive simplicity
PFC circuits
power supplies
AC motor speed control
DC servo and robot drives
Very fast switching speeds for high
High current handling capability
Uninterruptible power supplies (UPS)
DC choppers
High power density
Switched-mode and resonant-mode
frequency applications
V
I
V
t
C25
fi typ
CES
CE(sat)
G
C
G
E
C = Collector
TAB = Collector
= 900 V
=
=
= 150 ns
E
DS99392(12/05)
2.7 V
64 A
C (TAB)
C (TAB)

Related parts for IXGH32N90B2D1

IXGH32N90B2D1 Summary of contents

Page 1

... V GE(th CES CE CES ± GES CE(sat) C110 C GE © 2005 IXYS All rights reserved Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 Maximum Ratings 900 = 1 MW 900 GE ±20 ± 200 = 10 Ω < 600V CL 300 -55 ... +150 150 -55 ... +150 300 1.13/10Nm/lb.in. TO-247 TO-268 Characteristic Values (T = 25° ...

Page 2

... A/μ 100 thJC R thCS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C unless otherwise specified) J Min. Typ. Max 1790 ...

Page 3

... Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 6 5 64A C 32A 5 16A 4.5 4 3.5 3 2 Volts G E © 2005 IXYS All rights reserved Fig. 2. Extended Output Characteristics 240 200 9V 160 120 3.5 4 4.5 0 1.5 1.4 1.3 9V 1.2 1.1 7V 1.0 0.9 0 ...

Page 4

... C J º º Amperes C Fig. 9. Capacitance 10000 MHz 1000 100 Volts 0.1 0.01 0.1 IXYS reserves the right to change limits, test conditions, and dimensions 100 ies oes res Fig. 11. Maxim um Transient Therm al Resistance 1 10 Pulse Width - milliseconds IXGH 32N90B2D1 IXGT 32N90B2D1 Fig ...

Page 5

... R - Ohms G Fig. 14. Dependence of Turn-off Energy Loss on Collector Current 16 = 5Ω 15V 125 720V Amperes C Fig. 16. Dependence of Turn-off Energy Loss on Tem perature 16 = 5Ω 15V 720V Degrees Centigrade J © 2005 IXYS All rights reserved 64A 32A 16A º º 64A 32A 16A ...

Page 6

... I = 64A, 32A, 16A C 300 250 200 t d(off) = 5Ω 150 720V CE 100 Degrees Centigrade J IXYS reserves the right to change limits, test conditions, and dimensions. Sw itching Tim e on Gate Resistance 400 390 = 15V 40 GE 380 35 370 360 30 350 25 340 20 330 320 ...

Page 7

... Fig. 27. Dynamic parameters versus K/W Z thJC 0.1 0.01 0.001 0.00001 0.0001 0.001 Fig. 30. Transient thermal resistance junction to case © 2005 IXYS All rights reserved Ultrafast Diode Charateristic Curves 100°C VJ μ 600V 60A 30A 15A 100 A/μs 1000 ...

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