IXGH32N90B2D1 IXYS, IXGH32N90B2D1 Datasheet - Page 3

• Manufacturer Part Number: IXGH32N90B2D1
• Description: IGBT 900V 64A FRD TO-247
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH32N90B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 32A
• Current - Collector (ic) (max): 64A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 900
• Ic25, Tc=25°c, Igbt, (a): 64
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 32
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 165
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.25
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 27
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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5.5
4.5
3.5
2.5
1.5
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
6
5
4
3
2
0
0
6
Fig. 5. Collector-to-Em itter Voltage
0.5
0.5
7
Fig. 3. Output Characteristics
Fig. 1. Output Characteristics
vs. Gate-to-Em itter voltage
8
1
1
I
C
9
1.5
1.5
= 64A
V
32A
16A
10
V
C E
@ 125
V
V
GE
V
@ 25
G E
GE
CE
2
2
11
- Volts
= 15V
13V
11V
- Volts
= 15V
- Volts
13V
11V
2.5
12
º
º
2.5
C
C
13
3
3
14
T
3.5
3.5
9V
7V
5V
J
5V
9V
7V
= 25
15
4
4
º
16
C
4.5
4.5
17
240
200
160
120
140
120
100
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
80
40
80
60
40
20
0
0
Fig. 2. Extended Output Characteristics
-50
0
4
T
J
Fig. 4. Dependence of V
V
= 125
2
GE
-25
Fig. 6. Input Adm ittance
-40
25
5
V
= 15V
GE
4
º
º
º
C
C
C
0
T
= 15V
J
6
Tem perature
- Degrees Centigrade
6
@ 25
25
V
V
8
C E
G E
IXGH 32N90B2D1
IXGT 32N90B2D1
10
- Volts
- Volts
º
50
7
C
12
75
I
C
I
I
C
C
CE(sat)
8
13V
14
= 64A
11V
7V
9V
= 32A
= 16A
100
16
on
9
125
18
20
150
10