IXGR48N60C3D1 IXYS, IXGR48N60C3D1 Datasheet

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IXGR48N60C3D1

Manufacturer Part Number
IXGR48N60C3D1
Description
IGBT 56A 600V ISOPLUS247
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGR48N60C3D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 30A
Current - Collector (ic) (max)
56A
Power - Max
125W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
56
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
26
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
38
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.57
Rthjc, Max, Igbt, (°c/w)
1.0
If, Tj=110°c, Diode, (a)
27
Rthjc, Max, Diode, (ºc/w)
1.5
Package Style
ISOPLUS 247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GenX3
with Diode
(Electrically Isolated Back Surface)
High Speed PT IGBTs for
40-100kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
V
F
Weight
Symbol
V
I
I
V
© 2009 IXYS CORPORATION, All rights reserved
C25
C110
D110
CM
A
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
ISOL
GE(th)
CE(sat)
TM
I
V
V
V
I
Clamped Inductive Load
T
T
Continuous
Transient
T
T
T
T
T
T
V
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 Seconds
50/60 Hz RMS, t = 1min
Mounting Force
Test Conditions
Test Conditions
C
C
GE
CE
CE
J
J
C
C
C
C
C
C
C
GE
600V IGBT
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 15V, T
= 25°C
= V
= 0V
= 0V, V
= 30A, V
= 250μA, V
CES
GE
VJ
GE
= ±20V
= 125°C, R
CE
= 15V, Note 1
= V
GE
GE
= 1MΩ
G
= 3Ω
T
T
J
J
= 125°C
= 125°C
(T
J
IXGR48N60C3D1
= 25°C, Unless Otherwise Specified)
20..120 / 4.5..27
Characteristic Values
Min.
3.0
@ V
-55 ... +150
-55 ... +150
Maximum Ratings
I
CM
CE
= 100
≤ 600
2500
600
600
±20
±30
230
125
150
300
260
300
Typ.
2.3
1.8
56
26
27
30
5
±100
Max.
1.75
300
2.7
5.5
N/lb.
mA
mJ
nA
V~
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
A
V
V
V
V
g
V
I
V
t
ISOPLUS 247
G = Gate
E = Emitter
Features
Advantages
Applications
C25
fi(typ)
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Avalanche Rated
Square RBSOA
Anti-Parallel Ultra Fast Diode
Fast Switching
International Standard Package
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
- UL Recognized Package
- Isolated Mounting Surface
- 2500V Electrical Isolation
G
C
E
TM
C = Collector
≤ ≤ ≤ ≤ ≤ 2.7V
= 600V
= 56A
= 38ns
ISOLATED TAB
DS99810B(01/09)

Related parts for IXGR48N60C3D1

IXGR48N60C3D1 Summary of contents

Page 1

... GE(th CES CES 0V ±20V GES I = 30A 15V, Note CE(sat) © 2009 IXYS CORPORATION, All rights reserved IXGR48N60C3D1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 230 30 300 = 3Ω 100 G CM ≤ 600 @ V CE 125 -55 ... +150 150 -55 ... +150 300 260 2500 20..120 / 4.5..27 ...

Page 2

... Characteristic Values (T = 25°C, Unless Otherwise Specified) J Min. Typ. T =25° 100° =100°C 100 J = 30V 25 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGR48N60C3D1 ISOPLUS247 (IXGR) Outline Max 100 1.0 °C/W °C/W Max. 2 ...

Page 3

... GE 13V 11V 9V 7V 1.8 2.1 2.4 2.7 3 100 T = 25º IXGR48N60C3D1 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature 1.2 1 60A C 1.0 0.9 I ...

Page 4

... C ies oes res 200 Fig. 11. Maxim u m Tran sient Th erm al Im ped 0.001 0.01 P uls IXGR48N60C3D1 Fig. 8. Gate Charge V = 300V 30A NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º 3Ω < 10V / ns 250 300 350 400 450 ...

Page 5

... C 0.6 0.4 0 15A C 0 105 115 125 110 160 - - - - 105 140 = 15V 100 95 120 90 85 100 IXGR48N60C3D1 Fig. 13. Inductive Swiching Energy Loss vs. Collector Current - - - - E E off on Ω 15V 400V 125ºC, 25º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance d(off 125º ...

Page 6

... Degrees Centigrade J IXYS reserves the right to change limits, test conditions, and dimensions. 50 110 100 60A 30A 15A 105 115 125 IXGR48N60C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current - - - - d(on Ω 15V 400V CE 25ºC < TJ < 125º Amperes IXYS REF: G_48N60C3D1(5D)01-23-09-B ...

Page 7

... Fig. 22. Reverse recovery charge Q F versus -di / 60A 30A 15A 160 0 200 400 600 -di /dt F Fig. 25. Recovery time t rr 0.01 0.1 0.01 0.1 Time - Seconds IXGR48N60C3D1 100° 300V 60A 30A 15A 1000 0 200 400 A/μs /dt F Fig. 23. Peak reverse current I r versus - 100°C = 100° ...

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