IXGR48N60C3D1 IXYS, IXGR48N60C3D1 Datasheet - Page 4

• Manufacturer Part Number: IXGR48N60C3D1
• Description: IGBT 56A 600V ISOPLUS247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGR48N60C3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 56A
• Power - Max: 125W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 56
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 26
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 38
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.57
• Rthjc, Max, Igbt, (°c/w): 1.0
• If, Tj=110°c, Diode, (a): 27
• Rthjc, Max, Diode, (ºc/w): 1.5
• Package Style: ISOPLUS 247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
100
10.00
50
45
40
35
30
25
20
15
10
10
1.00
0.10
0.01
5
0
0.00001
0
0
10
f
= 1 MHz
5
20
30
Fig. 7. Transconductance
10
Fig. 9. Capacitance
40
0.0001
15
50
I
V
C
CE
- Amperes
60
20
- Volts
70
25
Fig. 11. Maxim u m Tran sient Th erm al Im ped an c e
80
C oes
C res
C ies
0.001
90
30
T
J
= - 40ºC
125ºC
100
25ºC
35
110 120
P uls e W id th - S e c o nd s
40
0.01
110
100
90
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
200
0
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
T
R
dV / dt < 10V / ns
C
G
CE
250
J
G
= 30A
= 10 mA
10
= 125ºC
= 3Ω
= 300V
300
0.1
20
Fig. 8. Gate Charge
350
Q
30
G
IXGR48N60C3D1
V
- NanoCoulombs
CE
400
- Volts
40
450
1
50
500
IXYS REF: G_48N60C3D1(5D)01-23-09-B
60
550
70
600
10
650
80