IRG4PC30KDPBF International Rectifier, IRG4PC30KDPBF Datasheet

IGBT W/DIODE 600V 28A TO247AC

IRG4PC30KDPBF

Manufacturer Part Number
IRG4PC30KDPBF
Description
IGBT W/DIODE 600V 28A TO247AC
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4PC30KDPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 16A
Current - Collector (ic) (max)
28A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
28A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
28A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
100W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4PC30KDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PC30KDPBF
Manufacturer:
ON
Quantity:
3 000
Features
www.irf.com
θ
θ
θ
θ

G
n-channel
C
E
TO-247AC
CE(on) typ.
GE
CES
=
C
1

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IRG4PC30KDPBF Summary of contents

Page 1

Features θ θ θ θ www.irf.com n-channel  ‚ CES = CE(on) typ TO-247AC 1 ...

Page 2

J ∆ ∆ ƒ „ J Ω Ω Ω, www.irf.com ...

Page 3

Square wave: 10 60% of rated voltage Ideal diodes 2 0 0.1 100 150 20µs PULSE WIDTH 0.1 ...

Page 4

T , Case Temperature ( 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 4 15V ...

Page 5

1MHz ies res 1200 oes ies 900 600 C oes 300 C res ...

Page 6

R = Ohm 150 C ° 480V 15V 4.0 GE 3.0 2.0 1.0 0 Collector-to-emitter Current (A) C 100 10 1 0.4 6 ...

Page 7

V = 200V 125° 25°C J 120 I = 24A 12A 100 di /dt - (A/µs) f 600 V = 200V 125°C J ...

Page 8

Same type device as D.U.T. 430µF 80% of Vce D.U. off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on d(on +Vge 10% ...

Page 9

Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...

Page 10

Notes: Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20) ‚V =80%( =20V, L=10µ CES GE ƒPulse width ≤ 80µs; duty factor ≤ 0.1%. „Pulse width 5.0µs, single shot. EXAMPLE: T ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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