IRG4PC30KDPBF International Rectifier, IRG4PC30KDPBF Datasheet

IGBT W/DIODE 600V 28A TO247AC

IRG4PC30KDPBF

Manufacturer Part Number
IRG4PC30KDPBF
Description
IGBT W/DIODE 600V 28A TO247AC
Manufacturer
International Rectifier
Datasheets
1.IRG4PC30KDPBF.pdf (11 pages)
2.IRG4PC30KD.pdf (11 pages)

Specifications of IRG4PC30KDPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 16A
Current - Collector (ic) (max)
28A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
28A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
28A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
100W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4PC30KDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRG4PC30KDPBF
Manufacturer:
ON
Quantity:
3 000
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• High short circuit rating optimized for motor control,
• Combines low conduction losses with high
• Tighter parameter distribution and higher efficiency
• IGBT co-packaged with HEXFRED
Benefits
• Latest generation 4 IGBTs offer highest power density
• HEXFRED
• This part replaces the IRGBC30KD2 and IRGBC30MD2
• For hints see design tip 97003
Absolute Maximum Ratings
Thermal Resistance
Features
Features
Features
Features
Features
R
R
R
R
Wt
www.irf.com
V
I
I
I
I
I
I
t
V
P
P
T
T
t
V
switching speed
ultrasoft recovery antiparallel diodes
Minimized recovery characteristics reduce noise, EMI and
C
C
CM
LM
F
FM
sc
products
sc
than previous generations
switching losses
STG
CES
GE
D
D
J
motor controls possible
GE
@ T
@ T
@ T
JC
JC
CS
JA
@ T
@ T
=10µs, @360V V
= 15V
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
TM
diodes optimized for performance with IGBTs.
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
CE
(start), T
Parameter
Parameter
J
TM
= 125°C,
ultrafast,
G
n-ch an nel
Min.
–––
–––
–––
–––
–––
300 (0.063 in. (1.6mm) from case)
IRG4PC30KD
C
E
10 lbf•in (1.1 N•m)
-55 to +150
TO-247AC
Max.
6 (0.21)
± 20
600
100
Typ.
28
16
58
58
12
58
10
42
0.24
–––
–––
–––
Short Circuit Rated
@V
V
CE(on) typ.
UltraFast IGBT
V
GE
CES
= 15V, I
Max.
–––
–––
1.2
2.5
40
= 600V
PD -91587A
C
2.21V
= 16A
4/15/2000
Units
Units
g (oz)
°C/W
µs
°C
V
A
V
W
1

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IRG4PC30KDPBF Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • High short circuit rating optimized for motor control, t =10µs, @360V V (start 15V GE • Combines low conduction losses ...

Page 2

IRG4PC30KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) ...

Page 3

rate d volta 0.1 Fig. 1 ...

Page 4

IRG4PC30KD 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 ...

Page 5

1MHz ies res 1200 oes ies 900 600 C oes 300 C res ...

Page 6

IRG4PC30KD 5 Ohm 150 C ° 480V 15V 4.0 GE 3.0 2.0 1.0 0 Collector-to-emitter Current (A) C Fig Typical ...

Page 7

° ° ...

Page 8

IRG4PC30KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...

Page 9

Figure 18e µ Figure 19. www.irf.com ...

Page 10

IRG4PC30KD Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor 0.1%. T Pulse width 5.0µs, single ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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