IRG7PH35UPBF International Rectifier, IRG7PH35UPBF Datasheet

IGBT N-CH 1200V 55A TO-247AC

IRG7PH35UPBF

Manufacturer Part Number
IRG7PH35UPBF
Description
IGBT N-CH 1200V 55A TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRG7PH35UPBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 20A
Current - Collector (ic) (max)
55A
Power - Max
210W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Type
IGBT
Dc Collector Current
55A
Collector Emitter Voltage Vces
1.9V
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-247AC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG7PH35UPBF
Quantity:
5 000
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low V
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for I
• Positive V
• Tight parameter distribution
• Lead -Free
1
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
Applications
• U.P.S
• Welding
• Solar inverter
• Induction heating
V
I
I
I
I
I
V
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
C
C
NOMINAL
CM
LM
J
STG
CES
GE
D
D
θJC
θCS
θJA
low V
@ T
@ T
@ T
@ T
(IGBT)
C
C
C
C
= 25°C
= 100°C
CE (ON)
= 25°C
= 100°C
CE (ON)
CE (ON)
and low switching losses
trench IGBT technology
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
Clamped Inductive Load Current, V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
temperature co-efficient
LM
GE
=15V
Parameter
Parameter
GE
=20V
f
G
n-channel
Gate
IRG7PH35UPbF
G
C
E
C
TO-247AC
Min.
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
G C
IRG7PH35UPbF
IRG7PH35U-EP
10 lbf·in (1.1 N·m)
E
Collector
-55 to +175
C
Max.
Typ.
1200
0.24
±30
210
105
–––
55
35
20
60
80
40
V
T
CE(on)
I
IRG7PH35U-EP
V
J(max)
NOMINAL
CES
C
TO-247AD
Max.
typ. = 1.9V
= 1200V
0.70
Emitter
–––
–––
= 175°C
G C
= 20A
E
www.irf.com
E
PD -
Units
Units
3/26/10
°C/W
97479
°C
W
V
A
V

Related parts for IRG7PH35UPBF

IRG7PH35UPBF Summary of contents

Page 1

... Thermal Resistance Junction-to-Case-(each IGBT) θJC R Thermal Resistance, Case-to-Sink (flat, greased surface) θCS R Thermal Resistance, Junction-to-Ambient (typical socket mount) θ n-channel IRG7PH35UPbF G Gate Parameter =15V GE =20V GE Parameter f IRG7PH35UPbF IRG7PH35U- 1200V CES I = 20A NOMINAL T = 175°C J(max typ. = 1.9V CE(on TO-247AC ...

Page 2

... IRG7PH35UPbF/IRG7PH35U-EP Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ΔV /ΔT Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ΔV /ΔTJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...

Page 3

... Fig Maximum DC Collector Current vs. Case Temperature 100 100 V CE (V) Fig Forward SOA ≤ 25°C, T 175° www.irf.com IRG7PH35UPbF/IRG7PH35U- Frequency ( kHz ) Fig Typical Load Current vs. Frequency (Load Current = I of fundamental) RMS 250 200 150 100 125 150 175 1000 10 μs 100 100 μs ...

Page 4

... IRG7PH35UPbF/IRG7PH35U- (V) Fig. 6- Typ. IGBT Output Characteristics T = -40° 30μ (V) Fig Typ. IGBT Output Characteristics T = 175° 30μ 10A 20A 40A (V) Fig Typical 25° 18V 15V 12V 10V 8. 18V 15V 12V 10V 8. vs 18V 15V 12V 10V 8. (V) Fig Typ. IGBT Output Characteristics T = 25° ...

Page 5

... Fig Typ. Switching Time vs 175° 680μ 600V 10000 td OFF 1000 t F 100 (Ω) Fig Typ. Switching Time vs 175° 680μ 600V www.irf.com IRG7PH35UPbF/IRG7PH35U- 25° 175° 680μ 175° 680μ 10Ω 15V 10000 60 80 100 G = 20A 15V ...

Page 6

... IRG7PH35UPbF/IRG7PH35U- CES = 600V V CES = 400V Total Gate Charge (nC) Fig Typical Gate Charge vs 20A 2.4mH 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case 6 80 100 τ J τ J τ 1 τ 1 Ci= τi/Ri ...

Page 7

... Fig.C.T.1 - Gate Charge Circuit (turn-off) DIODE CLAMP L DUT / DRIVER Rg Fig.C.T.3 - Switching Loss Circuit G f orce www.irf.com IRG7PH35UPbF/IRG7PH35U- VCC DUT VCC rce 100K D1 22K DUT rce Fig.C.T.5 - BVCES Filter Circuit L + DUT - Rg Fig.C.T.2 - RBSOA Circuit VCC R = ICM DUT Rg Fig.C.T.4 - Resistive Load Circuit C sense 0.0075μ ...

Page 8

... IRG7PH35UPbF/IRG7PH35U-EP 800 700 tf 600 90% I 500 400 300 200 5% I 100 0 Eoff Loss -100 -0.5 0.5 time(μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 175°C using Fig. CT 800 40 700 35 600 30 500 25 CE 400 20 15 300 10 200 CE 5 100 0 -5 -100 1 ...

Page 9

... WITH AS SEMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2001 IN THE AS SEMBLY LINE "H" Note: "P" sembly line pos ition indicates "Lead-Free" TO-247AC package is not recommended for Surface Mount Application. www.irf.com IRG7PH35UPbF/IRG7PH35U-EP INTERNAT IONAL RECT IFIER IRFPE30 LOGO 135H 56 57 ASS EMBLY ...

Page 10

... IRG7PH35UPbF/IRG7PH35U-EP EXAMPLE: T HIS IS AN IRGP30B120KD-E WIT EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2000 EMBLY LINE "H" Note: "P" sembly line pos ition indicates "Lead-Free" TO-247AD package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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