IXEH40N120 IXYS, IXEH40N120 Datasheet - Page 4

• Manufacturer Part Number: IXEH40N120
• Description: IGBT NPT3 SGL 1200V 60A TO-247AD
• Manufacturer: IXYS

Specifications of IXEH40N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 40A
• Current - Collector (ic) (max): 60A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.0
• Tfi, Typ, Igbt, (ns): 50
• Eoff, Typ, Tj=125°c, Igbt, (mj): 3.0
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

E
E
© 2003 IXYS All rights reserved
on
on
mJ
20
16
12
mJ
8
4
0
8
6
4
2
0
70
60
50
40
30
20
10
Fig. 11 Typ. turn off characteristics
0
10
0
0
Fig. 7
Fig. 9
V
V
I
T
C
T
I
V
VJ
CE
GE
F
V
V
T
I
VJ
F
R
CE
GE
j
=35A
=125°C
= 600 V
= ±15 V
= 35 A
= 125°C
200
20
=600V
=+-15V
= 125°C
= 30 A
= 600 V
of free wheeling diode
20
Typ. turn on energy and switching
times versus gate resistor
400
Typ. turn on energy and switching
times versus collector current
30
600
E on
E
40
t d(on)
rec(off)
t r
40
75Ω
75Ω
800
-di
F
50
/dt [A/µs]
E on
56Ω
1000
R
56Ω
I
G
C
60
39Ω
39Ω
60
t d(on)
V
V
R
T
E
1200
VJ
CE
GE
G
rec(off)
= 600 V
= 39 Ω
t r
= ±15 V
= 125°C
24Ω
R
24Ω
70
G
=
A
1400
Ω
15Ω
15Ω
80
80
1600
100
90
80
70
60
50
40
30
20
10
0
160
120
80
40
0
ns
ns
I
t
RM
RR
t
1800
t
350
300
250
200
150
100
50
0
E
E
off
off
Fig. 8
mJ
mJ
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. turn off characteristics
6
4
2
0
4
3
2
1
0
12
10
8
6
4
2
0
10
0
0
t
V
V
I
T
E
C
d(off)
VJ
CE
GE
off
V
V
R
T
T
V
VJ
CE
GE
G
= 600 V
= ±15 V
= 35 A
= 125°C
VJ
R
200
20
Typ. turn off energy and switching
times versus collector current
times versus gate resistor
= 39 Ω
= 600 V
= ±15 V
= 125°C
= 125°C
= 600 V
of free wheeling diode
20
400
30
600
75 Ω
40
56 Ω
800
40
-di
7,5A
F
39 Ω
/dt [A/µs]
R
IXEH 40N120
IXEH 40N120D1
G
50
=
1000
15A
R
24 Ω
G
I
60
C
1200
60
15 Ω
I
F
=
1400
70A
70
A
t
E
d(off)
t
Ω
f
off
1600
t
50A
f
80
80
35A
1200
1000
800
600
400
200
0
800
600
400
200
0
ns
ns
1800
4 - 4
t
t