IRG4PH50S-EPBF International Rectifier, IRG4PH50S-EPBF Datasheet
IRG4PH50S-EPBF
Specifications of IRG4PH50S-EPBF
Related parts for IRG4PH50S-EPBF
IRG4PH50S-EPBF Summary of contents
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... R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4PH50S-EPbF Standard Speed IGBT n-channel C TO-247AD IRG4PH50S-EPbF Max. 1200 57 33 114 d 114 ± 20 ± 270 200 80 - 150 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min. Typ. ...
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... IRG4PH50S-EPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) DV /DT Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe CES I Gate-to-Emitter Leakage Current GES ...
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... T = 150 80µs PULSE WIDTH 1 0.0 1.0 2.0 3 Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com IRG4PH50S-EPbF For both: Duty cycle: 50 125° 90°C sink Gate drive as specified Power Dissipation = 40W 1 f, Frequency (kHz) (Load Current = I of fundamental) RMS 1000 100 ° ...
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... IRG4PH50S-EPbF 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2 15V PULSE WIDTH 2.0 1.5 1.0 125 ...
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... CE Fig Typical Capacitance vs. Collector-to-Emitter Voltage 25 960V 15V GE ° 33A C 24.0 23.0 22.0 21 Gate Resistance (Ohm) ( Ω Fig Typical Switching Losses vs. Gate Resistance www.irf.com IRG4PH50S-EPbF SHORTED 100 0 Fig Typical Gate Charge vs. 1000 15V 960V CC 100 -60 -40 -20 Fig Typical Switching Losses vs. = 400V = 33A ...
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... IRG4PH50S-EPbF 120 Ω 5Ohm 150 C ° 960V CC 100 V = 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 1000 100 10 SAFE OPERATING AREA Fig Reverse Bias SOA = 20V o = 125 C 10 100 1000 V , Collector-to-Emitter Voltage (V) CE www.irf.com 10000 ...
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... L 50V 1000V * Driver same type as D.U.T 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. - Driver* 50V 1000V Ã www.irf.com IRG4PH50S-EPbF D.U. D.U. 480µF 960V - - - 7 ...
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... IRG4PH50S-EPbF TO-247AD Package Outline ( TO-247AD Part Marking Information TO-247AD package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 Dimensions are shown in millimeters (inches)) "$C $% $& Data and specifications subject to change without notice. ...