IXSR40N60BD1 IXYS, IXSR40N60BD1 Datasheet
IXSR40N60BD1
Manufacturer Part Number
IXSR40N60BD1
Description
IGBT 600V FRD SCSOA ISOPLUS247
Manufacturer
IXYS
Datasheet
1.IXSR40N60BD1.pdf
(2 pages)
Specifications of IXSR40N60BD1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 40A
Current - Collector (ic) (max)
70A
Power - Max
170W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
70A
Gate To Emitter Voltage (max)
±20V
Package Type
ISOPLUS 247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.2
Tfi, Typ, Igbt, (ns)
120
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.8
Rthjc, Max, Igbt, (k/w)
0.73
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXSR40N60BD1
Manufacturer:
IXYS
Quantity:
35 500
IGBT with Diode
ISOPLUS 247
(Electrically Isolated Backside)
Short Circuit SOA Capability
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
V
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
BV
V
I
I
V
© 2003 IXYS All rights reserved
CM
C25
C90
CES
GES
SC
J
JM
stg
CGR
GEM
C
ISOL
GE(th)
CE(sat)
CES
GES
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 H
V
R
T
50/60 Hz, RMS
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
GE
GE
C
GE
CE
CE
G
= 22
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 90 C
= 25 C, 1 ms
= 15 V, T
= 15 V, V
= 25 C
= 1 mA, V
= 4 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
T,
V
GE
non repetitive
GE
= 15 V
VJ
CE
CES
TM
GE
CE
= 20 V
= 125 C, R
= 360 V, T
= V
= 0 V
t = 1 min leads-to housing
GE
GE
= 1 M
J
G
= 125 C
= 22
T
T
(T
J
J
J
= 25 C
= 150 C
= 25 C, unless otherwise specified)
IXSR 40N60BD1
min.
600
Characteristic Values
4
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
CM
2500
= 80
600
600
150
170
150
300
20
30
70
40
CES
10
5
max.
650
100
2.2
7
5
V~
mA
nA
W
C
C
C
C
A
V
V
V
V
A
A
A
A
g
V
V
V
s
ISOPLUS 247
G = Gate,
E = Emitter
Features
Applications
Advantages
* Patent pending
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOS
MOS Gate turn-on
- drive simplicity
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
V
I
V
t
C25
fi(typ)
E 153432
CES
CE(sat)
G
TM
C
C = Collector,
= 120 ns
= 600 V
= 70 A
= 2.2 V
E
Isolated backside*
DS98672A(01/03)
TM
process
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IXSR40N60BD1 Summary of contents
Page 1
... V CES mA GE(th 0.8 • V CES CE CES GES CE(sat © 2003 IXYS All rights reserved IXSR 40N60BD1 Maximum Ratings 600 = 1 M 600 150 = 0.8 V CES = 125 170 -55 ... +150 150 -55 ... +150 2500 300 5 Characteristic Values ( unless otherwise specified) J min. typ. max. 600 ...
Page 2
... V, - 100 -di/dt = 200 thJC Note 40A T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 3700 440 60 190 = 0 CES ...