IXSR40N60BD1 IXYS, IXSR40N60BD1 Datasheet - Page 2
IXSR40N60BD1
Manufacturer Part Number
IXSR40N60BD1
Description
IGBT 600V FRD SCSOA ISOPLUS247
Manufacturer
IXYS
Datasheet
1.IXSR40N60BD1.pdf
(2 pages)
Specifications of IXSR40N60BD1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 40A
Current - Collector (ic) (max)
70A
Power - Max
170W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
70A
Gate To Emitter Voltage (max)
±20V
Package Type
ISOPLUS 247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.2
Tfi, Typ, Igbt, (ns)
120
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.8
Rthjc, Max, Igbt, (k/w)
0.73
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXSR40N60BD1
Manufacturer:
IXYS
Quantity:
35 500
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
V
I
t
R
Note: 1. I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
RM
d(on)
d(off)
fi
d(on)
d(off)
fi
ri
ri
rr
fs
off
on
off
F
iss
oss
rss
thJC
thCK
thJC
g
ge
gc
T
= 40A
Test Conditions
I
Pulse test, t
Test Conditions
I
Pulse test, t
C
F
= I
= I
T
V
I
; V
I
V
I
Inductive load, T
I
V
Remarks: Switching times may increase
for V
increased R
Inductive load, T
I
V
Remarks: Switching times may increase
for V
increased R
C
F
F
C
C
T,
GS
R
CE
CE
= I
= I
= I
CE
V
= 100 V
= I
= 1 A; -di/dt = 200 A/ s; V
= 0 V, V
GE
= 0.8 V
= 0.8 V
T,
= 10 V,
T,
T,
CE
CE
T,
V
= 0 V,
V
V
V
(Clamp) > 0.8 • V
(Clamp) > 0.8 • V
GE
GE
GE
GE
300 s, duty cycle
300 s, duty cycle d
= 15 V, V
= 15 V, L = 100 H,
= 15 V, L = 100 H
CES
CES
= 0 V, -di
DS
G
G
= 25 V, f = 1 MHz
, R
, R
G
G
J
J
= 2.7
= 2.7
= 25 C
CE
= 125 C
F
/dt = 100 A/ s
= 0.5 V
(T
(T
CES
CES
J
J
= 25 C, unless otherwise specified)
, higher T
, higher T
= 25 C, unless otherwise specified)
CES
R
= 30 V
2 %
2 %
J
J
or
or
min.
min.
16
Characteristic Values
Characteristic Values
4,835,592
4,850,072
3700
0.15
typ.
440
190
110
120
190
180
typ.
1.8
2.2
2.6
35
23
60
45
88
50
50
50
50
2
4,881,106
4,931,844
max.
max.
2.5
1.15 K/W
1.8
0.73 K/W
200
200
2.6 mJ
K/W
5,017,508
5,034,796
mJ
mJ
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
n s
n s
n s
n s
S
V
A
5,049,961
5,063,307
ISOPLUS 247 OUTLINE
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
IXSR 40N60BD1
20.80
15.75
19.81
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
5,187,117
5,237,481
Millimeter
5.45 BSC
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
5,486,715
5,381,025
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Inches
6,306,728B1