IRG7PH46UDPBF International Rectifier, IRG7PH46UDPBF Datasheet

IGBT N-CH 1200V TO-247AC

IRG7PH46UDPBF

Manufacturer Part Number
IRG7PH46UDPBF
Description
IGBT N-CH 1200V TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRG7PH46UDPBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 40A
Current - Collector (ic) (max)
40A
Power - Max
390W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG7PH46UDPBF
Manufacturer:
SANKEN
Quantity:
2 000
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
1
Features
• Low V
• Low switching losses
• Square RBSOA
• 100% of the parts tested for I
• Positive V
• Ultra fast soft recovery co-pak diode
• Tight parameter distribution
• Lead-Free
Applications
• U.P.S.
• Welding
• Solar Inverter
• Induction Heating
V
I
I
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
NOMINAL
CM
LM
F
F
FM
CES
GE
D
D
J
STG
θJC
θJC
θCS
θJA
low V
@ T
@ T
@ T
@ T
@ T
@ T
(IGBT)
(Diode)
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
CE (ON)
= 25°C
= 100°C
CE (ON)
CE (ON)
and low switching losses
trench IGBT technology
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
Pulse Collector Current, V
Clamped Inductive Load Current, V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
temperature co-efficient
LM

GE
Parameter
Parameter
= 15V
d
GE
= 20V
G
f
f
n-channel
IRG7PH46UDPbF
Gate
C
E
G
C
TO-247AC
IRG7PH46UDPbF
Min.
IRG7PH46UD-EP
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
–––
G C
10 lbf·in (1.1 N·m)
E
Collector
-55 to +150
C
Max.
1200
Typ.
0.24
108
120
160
108
160
±30
390
156
–––
–––
57
40
57
40
V
IRG7PH46UD-EP
T
CE(on)
I
V
J(max)
NOMINAL
C
TO-247AD
CES
Max.
typ. = 1.7V
0.32
0.66
= 1200V
Emitter
–––
–––
= 150°C
G C
E
= 40A
www.irf.com
E
04/26/2010
Units
Units
°C/W
°C
W
V
A
V

Related parts for IRG7PH46UDPBF

IRG7PH46UDPBF Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink (flat, greased surface) θCS R Thermal Resistance, Junction-to-Ambient (typical socket mount) θ n-channel IRG7PH46UDPbF G Gate Parameter = 15V GE = 20V GE d Parameter f f IRG7PH46UDPbF IRG7PH46UD- 1200V CES I = 40A NOMINAL T = 150°C J(max) V typ. = 1.7V CE(on TO-247AC TO-247AD IRG7PH46UD- Collector Emitter Max ...

Page 2

... IRG7PH46UDPbF/IRG7PH46UD-EP Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...

Page 3

... 25° 150°C Single Pulse 0 100 V CE (V) Fig Forward SOA ≤ 25°C, T 150° www.irf.com IRG7PH46UDPbF/IRG7PH46UD- Frequency ( kHz ) Fig Typical Load Current vs. Frequency (Load Current = I of fundamental) RMS 100 125 150 1000 10µsec 100µsec 1msec 1000 10000 =15V GE Duty cycle : 50 150° ...

Page 4

... IRG7PH46UDPbF/IRG7PH46UD-EP 160 140 120 100 (V) Fig Typ. IGBT Output Characteristics T = -40° 30µs J 160 140 120 100 (V) Fig Typ. IGBT Output Characteristics T = 150° 30µ 20A 40A 80A (V) Fig Typical -40° 18V 15V 12V 10V 8. 18V 15V 12V 10V 8. Fig Typ. Diode Forward Characteristics ...

Page 5

... Fig Typ. Energy Loss vs 150° 200µ 600V 10000 9000 8000 7000 6000 5000 4000 3000 2000 Ω ) Fig Typ. Energy Loss vs 150° 200µ 600V www.irf.com IRG7PH46UDPbF/IRG7PH46UD- vs 1000 E OFF 10Ω 15V T = 150° 200µ 10000 E OFF 100 150° ...

Page 6

... IRG7PH46UDPbF/IRG7PH46UD- 5.0Ω 10Ω 47Ω 100Ω (A) Fig Typ. Diode 150° 200 300 400 500 di F /dt (A/µs) Fig Typ. Diode 600V 15V vs 6000 5000 4000 3000 2000 1000 600 700 800 vs 40A 150°C J 1600 5.0 Ω Ω ...

Page 7

... Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com IRG7PH46UDPbF/IRG7PH46UD-EP 400 500 600 τ J τ J τ τ 1 τ ...

Page 8

... IRG7PH46UDPbF/IRG7PH46UD-EP DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT L -5V DUT / DRIVER Rg Fig.C.T.3 - Switching Loss Circuit VCC VCC C force 100K D1 22K DUT G force E force Fig.C.T.5 - BVCES Filter Circuit DUT VCC Rg Fig.C.T.2 - RBSOA Circuit R = VCC ICM DUT Rg Fig.C.T.4 - Resistive Load Circuit C sense 0.0075µ ...

Page 9

... V CE 200 100 Eoff Loss -100 -0.5 0 0.5 1 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 150°C using Fig. CT.4 J -10 -20 -30 -40 -50 www.irf.com IRG7PH46UDPbF/IRG7PH46UD-EP 900 90 800 80 700 70 600 60 500 50 400 40 300 30 200 20 100 -100 -10 1.5 2 Fig. WF2 - Typ. Turn-on Loss Waveform ...

Page 10

... IRG7PH46UDPbF/IRG7PH46UD-EP TO-247AC package is not recommended for Surface Mount Application. 10 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & www.irf.com ...

Page 11

... TO-247AD package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRG7PH46UDPbF/IRG7PH46UD-EP $% Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. ...

Related keywords