IXGT25N250 IXYS, IXGT25N250 Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXGT25N250
Manufacturer Part Number
IXGT25N250
Description
IGBT 2500V TO-268
Specifications of IXGT25N250
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
2500V
Vce(on) (max) @ Vge, Ic
2.9V @ 15V, 25A
Current - Collector (ic) (max)
60A
Power - Max
250W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
2500
Ic25, Tc=25°c, Igbt, (a)
60
Ic110, Tc=110°c, Igbt, (a)
25
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.90
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (k/w)
0.50
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Voltage IGBT
For Capacitor Discharge
Applications
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
BV
V
I
I
V
© 2007 IXYS CORPORATION, All rights reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ 1250V
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247)
Test Conditions
I
I
V
V
V
I
I
C
C
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, V
= 20 V, T
= 25°C
= 250 μA, V
= 250 μA, V
= 0.8 • V
= 0 V
= 0 V, V
= 25 A, V
= 75 A
J
GE
GE
CES
GE
= 125°C, R
= ±20 V
= 20 V, 1 ms
GE
CE
= 15 V
= 0 V
= V
GE
GE
Preliminary Technical Information
G
= 1 MΩ
= 20 Ω
T
J
(T
= 125°C
J
= 25°C unless otherwise specified)
IXGH25N250
IXGT25N250
IXGV25N250S
TO-247
TO-268
2500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
I
CM
Typ. Max.
1.13/10
= 240
2500
2500
± 30
± 20
300
260
200
250
150
60
25
6
4
±100
5.0
2.9
5.2
50
Nm/lb-in
1
mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
g
g
V
I
V
TO-247 (IXGH)
TO-268 (IXGT)
PLUS220SMD (IXGV...S)
G = Gate,
E = Emitter,
Features
Applications
Advantages
C25
flammability classification
(isolated mounting screw hole)
High peak current capability
Low saturation voltage
MOS Gate turn-on
Rugged NPT structure
Molding epoxies meet UL 94 V-0
Capacitor discharge
Pulser circuits
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
CES
CE(sat)
-drive simplicity
G
= 2500 V
=
≤ ≤ ≤ ≤ ≤
C
E
G
G
C = Collector,
TAB = Collector
2.9 V
E
60 A
E
DS99760 (04/07)
C (TAB)
C (TAB)
C (TAB)
Related parts for IXGT25N250
IXGT25N250 Summary of contents
... V CES CE CES ±20 V GES CE(sat © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXGH25N250 IXGT25N250 IXGV25N250S Maximum Ratings 2500 = 1 MΩ 2500 GE ± 20 ± 200 = 20 Ω 240 G CM 250 -55 ... +150 150 -55 ... +150 300 260 1.13/10 TO-247 6 TO-268 ...
... IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 IXGH25N250 IXGT25N250 IXGV25N250S Characteristic Values (T = 25°C unless otherwise specified) J Min. ...
... V - Volts CE Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Volts GE © 2007 IXYS CORPORATION, All rights reserved IXGH25N250 IXGT25N250 IXGV25N250S 250 225 20V 200 15V 175 150 10V 125 100 2.4 2.2 2 1.8 15V 1.6 1.4 10V 1.2 1 0.8 0.6 0 ...
... I = 150A, 50A C 205 200 195 190 Degrees Centigrade J IXYS reserves the right to change limits, test conditions, and dimensions. IXGH25N250 IXGT25N250 IXGV25N250S 680 640 600 560 520 480 440 400 360 320 280 240 200 120 140 160 180 200 25 Fig ...
... Ω < 10V / ns 0 250 500 750 1000 1250 1500 V - Volts CE 1.00 0.10 0.01 0.0001 0.001 © 2007 IXYS CORPORATION, All rights reserved IXGH25N250 IXGT25N250 IXGV25N250S 280 16 V 265 14 I 250 I 235 12 220 10 205 8 190 175 6 160 4 145 130 2 115 ...
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