IXGT25N250 IXYS, IXGT25N250 Datasheet - Page 3

• Manufacturer Part Number: IXGT25N250
• Description: IGBT 2500V TO-268
• Manufacturer: IXYS

Specifications of IXGT25N250

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 2500V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 25A
• Current - Collector (ic) (max): 60A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic110, Tc=110°c, Igbt, (a): 25
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.90
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (k/w): 0.50
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS CORPORATION, All rights reserved
150
135
120
105
200
180
160
140
120
100
10
90
75
60
45
30
15
80
60
40
20
9
8
7
6
5
4
3
0
0
7
0
0
8
1
2
Fig. 5. Collector-to-Emitter Voltage
9
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
2
4
10
V
3
V
6
V
11
V
GE
CE
CE
GE
@ 125ºC
@ 25ºC
- Volts
- Volts
V
- Volts
= 25V
GE
12
4
20V
8
= 25V
20V
13
15V
10V
10
5
14
I
12
6
I
15V
C
I
10V
C
V
C
15
= 50A
GE
= 100A
= 150A
= 15V
IXGH25N250 IXGT25N250 IXGV25N250S
14
7
16
17
16
8
250
225
200
175
150
125
100
200
180
160
140
120
100
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
75
50
25
80
60
40
20
0
2
1
0
-50
0
4
V
Fig. 2. Extended Output Characteristics
GE
2
-25
5
= 15V
Fig. 4. Dependence of V
V
GE
4
6
= 25V
0
Fig. 6. Input Admittance
20V
Junction Temperature
T
6
J
- Degrees Centigrade
7
25
V
V
15V
10V
8
CE
GE
@ 25ºC
8
- Volts
- Volts
10
50
T
J
9
I
C
= - 40ºC
12
125ºC
= 150A
75
25ºC
I
C
10
CE(sat)
= 100A
14
I
C
100
= 50A
11
16
on
125
18
12
150
20
13