UM6K1NTN Rohm Semiconductor, UM6K1NTN Datasheet
UM6K1NTN
Manufacturer Part Number
UM6K1NTN
Description
MOSFET 2N-CH 30V .1A SOT-363
Manufacturer
Rohm Semiconductor
Datasheet
1.UM6K1NTN.pdf
(4 pages)
Specifications of UM6K1NTN
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 Ohm @ 10mA, 4V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100mA
Vgs(th) (max) @ Id
1.5V @ 100µA
Input Capacitance (ciss) @ Vds
13pF @ 5V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Umt6
Module Configuration
Transistor Polarity
Dual N Channel
Continuous Drain Current Id
10mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
8ohm
Rds(on) Test Voltage Vgs
4V
Threshold
RoHS Compliant
Configuration
Dual
Resistance Drain-source Rds (on)
8 Ohm @ 4 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.1 A
Power Dissipation
150 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
UM6K1NTNTR
UM6K1NTR
UM6K1NTR
UM6K1NTR
UM6K1NTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UM6K1NTN
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
2.5V Drive Nch+Nch MOS FET
UM6K1N
Silicon N-channel MOS FET
1) Two 2SK3018 transistors in a single UMT package.
2) The MOS FET elements are independent, eliminating
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for
Interfacing, switching (30V, 100mA)
<It is the same ratings for Tr1 and Tr2.>
∗1 Pw≤10µs, Duty cycle≤1%
∗2
Channel to ambient
∗ With each pin mounted on the recommended lands.
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Type
UM6K1N
Structure
Features
Packaging specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
With each pin mounted on the recommended lands.
portable equipment.
mutual interference.
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Taping
3000
TN
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
P
DSS
GSS
I
DP
D
D
∗1
∗2
∗
−55 to +150
Limits
Limits
1042
±100
±400
833
±20
150
150
30
°C / W / ELEMENT
External dimensions (Unit : mm)
Inner circuit
°C / W / TOTAL
UMT6
Unit
Unit
mW
mA
mA
°C
°C
1pin mark
V
V
0.65
Abbreviated symbol : K1
( 1 )
( 6 )
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
2.0
1.3
0.2
( 5 )
( 2 )
0.65
(6)
(1)
( 4 )
( 3 )
Gate
Protection
Diode
∗
Tr1
Each lead has same dimensions
∗
A protection diode has been built
in between the gate and the source
to protect against static electricity
when the product is in use.
Use the protection circuit when
rated voltages are exceeded.
0.15
Rev.B
0.9
0.7
(5)
(2)
Gate
Protection
Diode
UM6K1N
∗
Tr2
(4)
(3)
1/3
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UM6K1NTN Summary of contents
Page 1
Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N Structure Silicon N-channel MOS FET Features 1) Two 2SK3018 transistors in a single UMT package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut ...
Page 2
Transistors Electrical characteristics (Ta=25°C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source ...
Page 3
Transistors 9 V =4V GS Pulsed =100mA =50mA −50 − 100 125 150 CHANNEL TEMPERATURE : Tch ( °C) Fig.7 Static Drain-Source On-State ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...