UM6K1NTN Rohm Semiconductor, UM6K1NTN Datasheet
UM6K1NTN
Specifications of UM6K1NTN
UM6K1NTR
UM6K1NTR
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UM6K1NTN Summary of contents
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Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N Structure Silicon N-channel MOS FET Features 1) Two 2SK3018 transistors in a single UMT package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut ...
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Transistors Electrical characteristics (Ta=25°C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source ...
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Transistors 9 V =4V GS Pulsed =100mA =50mA −50 − 100 125 150 CHANNEL TEMPERATURE : Tch ( °C) Fig.7 Static Drain-Source On-State ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...