EM6K1T2R Rohm Semiconductor, EM6K1T2R Datasheet
EM6K1T2R
Manufacturer Part Number
EM6K1T2R
Description
MOSFET 2N-CH 30V .1A EMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.EM6K1T2R.pdf
(4 pages)
Specifications of EM6K1T2R
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 Ohm @ 10mA, 4V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100mA
Vgs(th) (max) @ Id
1.5V @ 100µA
Input Capacitance (ciss) @ Vds
13pF @ 5V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
EMT6
Emt6 N Chan
Module Configuration
Transistor Polarity
Dual N Channel
Continuous Drain Current Id
10mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
8ohm
Rds(on) Test Voltage Vgs
4V
Threshold
RoHS Compliant
Configuration
Dual
Resistance Drain-source Rds (on)
8 Ohm @ 4 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
120 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
EM6K1T2R
EM6K1T2RTR
EM6K1T2RTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EM6K1T2R
Manufacturer:
ROHM
Quantity:
512 000
Part Number:
EM6K1T2R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistor
2.5V Drive Nch+Nch MOS FET
EM6K1
Silicon N-channel MOS FET
1) Two 2SK3019 transistors in a single EMT package.
2) The MOS FET elements are independent, eliminating
3) Mounting cost and area can be cut in half.
4) Low on-resistance.
5) Low voltage drive (2.5V) makes this device ideal for
Interfacing, switching (30V, 100mA)
<It is the same ratings for Tr1 and Tr2.>
∗ 1 Pw≤10µs, Duty cycle≤1%
∗ 2 With each pin mounted on the recommended lands.
Drain−source voltage
Gate−source voltage
Drain current
Channel temperature
Storage temperature
Total power dissipation
Type
EM6K1
Structure
Features
Packaging specifications
Applications
Absolute maximum ratings (Ta=25°C)
mutual interference.
portable equipment.
Parameter
Package
Code
Basic ordering unit
(pieces)
Continuous
Pulsed
Symbol
Taping
V
V
Tstg
Tch
8000
I
T2R
P
DSS
GSS
I
DP
D
D
∗ 1
∗ 2
−55 to +150
Limits
±100
±400
±20
150
150
120
30
mW / ELEMENT
mW / TOTAL
∗ A protection diode has been built in between the gate and
External dimensions (Unit : mm)
Equivalent circuit
EMT6
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Unit
mA
mA
°C
°C
V
V
(6)
(1)
Gate
Protection
Diode
1pin mark
Tr1
∗
Abbreviated symbol : K1
( 1 ) ( 2 )
(5)
(2)
0.5
( 6 )
0.22
1.6
1.0
0.5
( 5 )
( 3 )
Gate
Protection
Diode
( 4 )
∗
Tr2
Each lead has same dimensions
0.13
(4)
(3)
0.5
Rev.C
(1)Tr1 Source
(2)Tr1 Gate
(3)Tr2 Drain
(4)Tr2 Source
(5)Tr2 Gate
(6)Tr1 Drain
EM6K1
1/3
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EM6K1T2R Summary of contents
Page 1
Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 Structure Silicon N-channel MOS FET Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut ...
Page 2
Transistor Electrical characteristics (Ta=25°C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Gate−source leakage Drain−source breakdown voltage V Zero gate voltage drain current Gate threshold voltage V R Static drain−source on−starte resistance R Forward transfer admittance Input ...
Page 3
Transistor 9 V =4V GS Pulsed =100mA =50mA −50 − 100 125 CHANNEL TEMPERATURE : Tch ( °C) Fig.7 Static Drain-Source On-State Resistance ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...