EM6K1T2R Rohm Semiconductor, EM6K1T2R Datasheet
EM6K1T2R
Specifications of EM6K1T2R
EM6K1T2RTR
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EM6K1T2R Summary of contents
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Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 Structure Silicon N-channel MOS FET Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut ...
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Transistor Electrical characteristics (Ta=25°C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Gate−source leakage Drain−source breakdown voltage V Zero gate voltage drain current Gate threshold voltage V R Static drain−source on−starte resistance R Forward transfer admittance Input ...
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Transistor 9 V =4V GS Pulsed =100mA =50mA −50 − 100 125 CHANNEL TEMPERATURE : Tch ( °C) Fig.7 Static Drain-Source On-State Resistance ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...