EM6K1T2R Rohm Semiconductor, EM6K1T2R Datasheet - Page 2

• Manufacturer Part Number: EM6K1T2R
• Description: MOSFET 2N-CH 30V .1A EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EM6K1T2R

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Input Capacitance (ciss) @ Vds: 13pF @ 5V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Emt6 N Chan: Module Configuration
• Transistor Polarity: Dual N Channel
• Continuous Drain Current Id: 10mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 4V
• Threshold: RoHS Compliant
• Configuration: Dual
• Resistance Drain-source Rds (on): 8 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 120 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: EM6K1T2R; EM6K1T2RTR

Transistor
<It is the same characteristics for Tr1 and Tr2.>
Gate−source leakage
Drain−source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain−source on−starte
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Electrical characteristics (Ta=25°C)
Electrical characteristic curves
0.15
0.05
Fig.1 Typical Output Characteristics
Fig.4 Static Drain-Source On-State
0.1
0
0.5
0
50
20
10
5
2
1
0.001
DRAIN-SOURCE VOLTAGE : V
Resistance vs. Drain Current (Ι)
0.002
1
Ta=125 °C
Parameter
4V
3.5V
0.005 0.01 0.02
DRAIN CURRENT : I
−25 °C
75 °C
25 °C
V
2
GS
2.5V
2V
=1.5V
3V
3
0.05
D
0.1
4
(A)
DS
V
Pulsed
( V)
GS
0.2
=4V
V
Symbol
R
R
V
5
(BR)DSS
t
t
I
I
C
C
C
DS(on)
DS(on)
0.5
GS(th)
Y
d(on)
d(off)
GSS
DSS
t
t
oss
rss
iss
fs
r
f
200m
100m
Fig.2 Typical Transfer Characteristics
0.5m
0.2m
0.1m
Fig.5 Static Drain-Source On-State
50m
20m
10m
5m
2m
1m
Min.
0.5
0
50
0.8
20
10
30
20
5
2
1
0.001
−
−
−
−
−
−
−
−
−
−
−
V
Pulsed
DS
GATE-SOURCE VOLTAGE : V
Resistance vs. Drain Current (ΙΙ)
=3V
0.002
Ta=125 °C
Typ.
1
13
15
35
80
80
DRAIN CURRENT : I
0.005 0.01 0.02
−
−
−
−
5
7
−
9
4
−25 °C
75 °C
25 °C
Max.
2
1.0
1.5
±1
13
−
8
−
−
−
−
−
−
−
−
Ta=125 °C
−25 °C
25 °C
75 °C
0.05
Unit
mS
3
D
µA
µA
pF
pF
pF
ns
ns
ns
ns
0.1
V
V
Ω
Ω
(A)
GS
V
Pulsed
GS
( V)
0.2
=2.5V
V
I
V
V
I
I
V
V
V
f = 1MHz
I
V
R
R
D
D
D
D
4
GS
DS
DS
DS
DS
GS
GS
= 10µA, V
= 10mA, V
= 1mA, V
= 10mA, V
L
G
= 500Ω
0.5
= 10Ω
= ±20V, V
= 30V, V
= 3V, I
= 3V, I
= 5V
= 0V
= 5V
D
D
Fig.6 Static Drain-Source On-State
GS
1.5
0.5
= 100µA
= 10mA
GS
2
0
Conditions
GS
GS
DD
1
−50
15
10
5
0
= 2.5V
Fig.3 Gate Threshold Voltage vs.
DS
= 0V
0
= 0V
= 4V
= 0V
CHANNEL TEMPERATURE : Tch (°C)
−25
5V
Resistance vs. Gate-Source
Voltage
GATE-SOURCE VOLTAGE : V
Channel Temperature
0
5
25
Rev.C
50
10
I
I
D
D
75
=0.1A
=0.05A
EM6K1
100 125 150
15
V
I
D
Ta=25 °C
Pulsed
DS
=0.1mA
GS
=3V
( V)
2/3
20