MOSFET N-CH DUAL 20V 2.4A MICRO8

IRF7501TRPBF

Manufacturer Part NumberIRF7501TRPBF
DescriptionMOSFET N-CH DUAL 20V 2.4A MICRO8
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7501TRPBF datasheet
 

Specifications of IRF7501TRPBF

Fet Type2 N-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs135 mOhm @ 1.7A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C2.4AVgs(th) (max) @ Id700mV @ 250µA
Gate Charge (qg) @ Vgs8nC @ 4.5VInput Capacitance (ciss) @ Vds260pF @ 15V
Power - Max1.25WMounting TypeSurface Mount
Package / CaseMicro8™ConfigurationDual
Transistor PolarityDual N-ChannelResistance Drain-source Rds (on)135 mOhms
Drain-source Breakdown Voltage20 VGate-source Breakdown Voltage12 V
Continuous Drain Current2.4 APower Dissipation1.2 W
Gate Charge Qg5.3 nCLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesIRF7501TRPBF
IRF7501TRPBFTR
Q2235500
Q3145294
  
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Next
Generation V Technology
l
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Ulrtra Low On-Resistance
Dual N-Channel MOSFET
l
Very Small SOIC Package
l
l
Low Profile (<1.1mm)
Available in Tape & Reel
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Fast Switching
Lead-Free
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Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Maximum Power Dissipation„
D
A
Maximum Power Dissipation „
P
@T
= 70°C
D
A
Linear Derating Factor
V
Gate-to-Source Voltage Single Pulse tp<10µs
GSM
V
Gate-to-Source Voltage
GS
Peak Diode Recovery dv/dt ‚
dv/dt
TJ , TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Maximum Junction-to-Ambient „
R
θJA
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
www.irf.com
IRF7501PbF
HEXFET
1
8
S1
D1
2
7
G1
3
6
S2
4
5
G2
Top View
@ 10V
GS
@ 10V
GS
-55 to + 150
240 (1.6mm from case)
PD - 95345
®
Power MOSFET
V
=20V
DSS
D1
D2
D2
R
= 0.135Ω
DS(on)
Micro8
Max.
Units
20
V
2.4
1.9
A
19
1.25
W
0.8
W
0.01
W/°C
16
V
± 12
V
5.0
V/ns
°C
Max.
Units
100
°C/W
1
02/22/05

IRF7501TRPBF Summary of contents

  • Page 1

    ... Lead-Free l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

  • Page 2

    IRF7501PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

  • Page 3

    VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 10 BOTTOM 1.5V 1 0.1 1.5V 20µs PULSE WIDTH T = 25°C J 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 T ...

  • Page 4

    IRF7501PbF 2 1.7A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 5. Normalized On-Resistance Vs. Temperature 0.13 0.11 0.09 0.07 0.05 4 0.8 0.6 0.4 0.2 V ...

  • Page 5

    1MHz iss rss oss ds gd 400 C iss 300 C oss 200 C rss ...

  • Page 6

    IRF7501PbF Charge Fig 11a. Basic Gate Charge Waveform Fig 12a. Switching Time Test Circuit V DS 90% 10 Fig 12b. Switching Time Waveforms 6 12V V GS Fig 11b. Gate ...

  • Page 7

    Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ 5% www.irf.com • • • - ...

  • Page 8

    IRF7501PbF Micro8 Package Outline Dimensions are shown in milimeters (inches 0.25 (.010 ...

  • Page 9

    Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES : ...