IRF7501TRPBF International Rectifier, IRF7501TRPBF Datasheet
IRF7501TRPBF
Specifications of IRF7501TRPBF
IRF7501TRPBFTR
Q2235500
Q3145294
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IRF7501TRPBF Summary of contents
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... Lead-Free l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
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IRF7501PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
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VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 10 BOTTOM 1.5V 1 0.1 1.5V 20µs PULSE WIDTH T = 25°C J 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 T ...
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IRF7501PbF 2 1.7A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 5. Normalized On-Resistance Vs. Temperature 0.13 0.11 0.09 0.07 0.05 4 0.8 0.6 0.4 0.2 V ...
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1MHz iss rss oss ds gd 400 C iss 300 C oss 200 C rss ...
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IRF7501PbF Charge Fig 11a. Basic Gate Charge Waveform Fig 12a. Switching Time Test Circuit V DS 90% 10 Fig 12b. Switching Time Waveforms 6 12V V GS Fig 11b. Gate ...
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Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ 5% www.irf.com • • • - ...
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IRF7501PbF Micro8 Package Outline Dimensions are shown in milimeters (inches 0.25 (.010 ...
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Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES : ...