IRF7342TRPBF International Rectifier, IRF7342TRPBF Datasheet
IRF7342TRPBF
Specifications of IRF7342TRPBF
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IRF7342TRPBF Summary of contents
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... Fast Switching l Lead-Free l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
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IRF7342PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate ...
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VGS TOP -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V 10 -3.0V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS 100 ° ...
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IRF7342PbF 2.0 -3 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J 0.45 0. 0.15 0. ...
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1MHz iss rss 960 oss iss 720 480 C oss 240 C rss ...
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IRF7342PbF SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010] NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ...
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SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...