IRF7904PBF International Rectifier, IRF7904PBF Datasheet - Page 8

• Manufacturer Part Number: IRF7904PBF
• Description: MOSFET N-CHAN DUAL 30V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7904PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.6A, 11A
• Vgs(th) (max) @ Id: 2.25V @ 25µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 910pF @ 15V
• Power - Max: 1.4W, 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8
Fig 29a. Unclamped Inductive Test Circuit
Fig 30a. Switching Time Test Circuit
Fig 31a. Gate Charge Test Circuit

12V
‚
+
-
V
GS
Same Type as D.U.T.
R G
Current Regulator
20V
V
V DS
.2µF
GS
D.U.T
Duty Factor < 0.1%
Pulse Width < 1µs
V
t p
50KΩ
-3mA
GS
Current Sampling Resistors
Fig 28.
.3µF
I AS
ƒ
D.U.T
V
+
-
I
•
•
•
•
G
DS
0.01 Ω
L
SD
D.U.T.
•
•
•
I
D
D.U.T
L
15V
+
-
D
V
-
DS
V
„
G
HEXFET
DRIVER
DD
+
-
+
-
+
V DD
A
®
Power MOSFETs
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
90%
Fig 29b. Unclamped Inductive Waveforms
V
10%
V
DS
Fig 30b. Switching Time Waveforms
P.W.
SD
GS
DS
I
Fig 31b. Gate Charge Waveform
AS
Vgs(th)
Waveform
Qgs1 Qgs2
Waveform
Vds
for N-Channel
Ripple ≤ 5%
Body Diode
t
Period
d(on)
Body Diode Forward
Diode Recovery
Current
t
r
Qgd
dv/dt
Forward Drop
t p
di/dt
Qgodr
D =
t
d(off)
Period
P.W.
V
t
(BR)DSS
f
V
V
I
www.irf.com
SD
GS
DD
Vgs
=10V
Id