NTZD3154NT1G ON Semiconductor, NTZD3154NT1G Datasheet - Page 5

• Manufacturer Part Number: NTZD3154NT1G
• Description: MOSFET 2N-CH 20V 540MA SOT-563
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTZD3154NT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 540mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 150pF @ 16V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.54 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.55Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±6V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-563
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTZD3154NT1GOSTR

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6
1
e
−X−
D
5
2
4
3
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
b
0.08 (0.003)
−Y−
6 5 PL
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
X
Y
0.0531
1.35
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
A
http://onsemi.com
SOT−563, 6 LEAD
CASE 463A−01
H
0.0197
C
L
ISSUE F
E
0.0118
0.5
0.3
0.0394
1.0
5
0.0197
0.5
SCALE 20:1
0.0177
0.45
NOTES:
inches
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
mm
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
DIM
H
A
b
C
D
E
e
L
E
MIN
0.50
0.17
0.08
1.50
1.10
0.10
1.50
MILLIMETERS
0.5 BSC
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
NOM
0.55
0.22
0.12
1.60
1.20
0.20
1.60
MAX
0.60
0.27
0.18
1.70
1.30
0.30
1.70
0.020
0.007
0.003
0.059
0.043
0.004
0.059
MIN
0.02 BSC
INCHES
0.021
0.009
0.005
0.062
0.047
0.008
0.062
NOM
NTZD3154N/D
0.023
0.007
0.066
0.051
0.012
0.066
0.011
MAX