NTZD3154NT1G ON Semiconductor, NTZD3154NT1G Datasheet

NTZD3154NT1G

Manufacturer Part Number

NTZD3154NT1G

Description

MOSFET 2N-CH 20V 540MA SOT-563

Manufacturer

ON Semiconductor

Type

Small Signalr

Datasheet

1.NTZD3154NT1G.pdf (5 pages)

Specifications of NTZD3154NT1G

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

550 mOhm @ 540mA, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

540mA

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

2.5nC @ 4.5V

Input Capacitance (ciss) @ Vds

150pF @ 16V

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-6

Configuration

Dual

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.55 Ohm @ 4.5 V

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 6 V

Continuous Drain Current

0.54 A

Power Dissipation

250 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.55Ohm

Drain-source On-volt

20V

Gate-source Voltage (max)

±6V

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SOT-563

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTZD3154NT1GOSTR

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Part Number

Manufacturer

Quantity

Price

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Manufacturer:

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Company:

H&T Electronics

Part Number:

NTZD3154NT1G

Quantity:

4 500

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NTZD3154N

Small Signal MOSFET

20 V, 540 mA, Dual N−Channel

Features

•

Applications

•

March, 2006 − Rev. 1

MAXIMUM RATINGS

THERMAL RESISTANCE RATINGS

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain Current

Power Dissipation

Continuous Drain Current

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Lead Temperature for Soldering Purposes

Junction−to−Ambient – Steady State

Junction−to−Ambient – t v 5 s (Note 1)

Low R

Low Threshold Voltage

Small Footprint 1.6 x 1.6 mm

ESD Protected Gate

These are Pb−Free Devices

Load/Power Switches

Power Supply Converter Circuits

Battery Management

Cell Phones, Digital Cameras, PDAs, Pagers, etc.

(Cu. area = 1.127 in sq [1 oz] including traces).

(Note 1)

(1/8″ from case for 10 s)

(Note 1)

DS(on)

Improving System Efficiency

Parameter

= 25°C unless otherwise noted.)

Steady

t v 5 s

State

Steady State

t v 5 s

= 10 ms

= 25°C

= 85°C

= 25°C

= 85°C

Symbol

qJA

DSS

STG

−55 to

Value

Max

500

447

±6.0

540

390

250

570

410

280

150

350

260

1.5

°C/W

Unit

°C

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

(BR)DSS

(Note: Microdot may be in either location)

CASE 463A

SOT−563−6

ORDERING INFORMATION

400 mW @ 4.5 V

500 mW @ 2.5 V

700 mW @ 1.8 V

http://onsemi.com

PINOUT: SOT−563

= Specific Device Code

= Date Code

= Pb−Free Package

DS(on)

Top View

N−Channel

MOSFET

Typ

Publication Order Number:

MARKING

DIAGRAM

TV M G

NTZD3154N/D

Max (Note 1)

540 mA

Related parts for NTZD3154NT1G

NTZD3154NT1G Summary of contents

Page 1

NTZD3154N Small Signal MOSFET 20 V, 540 mA, Dual N−Channel Features • Low R Improving System Efficiency DS(on) • Low Threshold Voltage • Small Footprint 1.6 x 1.6 mm • ESD Protected Gate • These are Pb−Free Devices Applications • ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Tem- perature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND ...

Page 3

TYPICAL PERFORMANCE CURVES 1.2 5.5 V 1 0 1.0 V ...

Page 4

... GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation versus Gate Resistance ORDERING INFORMATION Device NTZD3154NT1G NTZD3154NT5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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