AO4840 Alpha & Omega Semiconductor Inc, AO4840 Datasheet
AO4840
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AO4840 Summary of contents
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... Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4840/L uses advanced trench technology MOSFETs to provide excellent R and low gate charge. This dual device is DS(ON) suitable for use as a load switch or in PWM applications. AO4840 and AO4840L are electrically identical. -RoHS Compliant -AO4840L is Halogen Free(Green Product ...
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... AO4840 Electrical Characteristics (T =25° C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4840 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V (Volts) DS Fig 1: On-Region Characteristics =4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd =3. 1.8 1.6 1.4 1.2 V =10V 1.0E+01 I =6A D 1.0E+00 1.0E-01 125°C 1 ...
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... AO4840 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =20V (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 10ms 1s 1.0 10s T =150°C J(Max =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note =62.5°C 0.1 0.01 0.00001 0.0001 Alpha & ...