AOP607 Alpha & Omega Semiconductor Inc, AOP607 Datasheet
AOP607
Specifications of AOP607
785-1141-1
785-1141-5
Available stocks
Related parts for AOP607
AOP607 Summary of contents
Page 1
... The AOP607 uses advanced trench technology MOSFETs to provide excellent R gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP607 is Pb- free (meets ROHS & Sony 259 specifications). AOP607L is a Green Product ordering option. AOP607 and AOP607L are electrically identical ...
Page 2
... AOP607 N Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...
Page 3
... AOP607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 20 10.0V 5. (Volts) DS Fig 1: On-Region Characteristics 100 =4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 120 100 (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 15 4. =3. 1.8 1.6 1.4 1.2 ...
Page 4
... AOP607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 V =30V 4. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 10ms 1.0 10s T =150°C J(Max =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =50°C/W θJA 1 0.1 Single Pulse ...
Page 5
... AOP607 P-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...
Page 6
... AOP607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 20 -10V -4. -3. (Volts) DS Fig 1: On-Region Characteristics 130 120 V =-4.5V GS 110 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 140 120 100 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. ...
Page 7
... AOP607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 V =-30V DS I =-3. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C, T =25°C J(Max DS(ON) 10.0 limited 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =50°C/W θ ...