IRF7379QTRPBF International Rectifier, IRF7379QTRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7379QTRPBF
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7379QTRPBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 4.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7379QTRPBFCT

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2.0
1.5
1.0
0.5
0.0
Fig 15. Normalized On-Resistance
-60
I
D
-40
= -3.0A
T , Junction Temperature (°C)
-20
J
Vs. Temperature
0
20
40
0.16
0.14
0.12
0.10
0.08
0.06
60
0
Fig 17. Typical On-Resistance Vs. Gate
80
-V
100 120 140 160
V
GS
GS
4
, Gate-to-Source Voltage (V)
= -10V
Voltage
A
8
ID = -4.3A
Fig 16. Typical On-Resistance Vs. Drain
0.50
0.40
0.30
0.20
0.10
0.00
12
0
2
16
-I
D
4
VGS = -4.5V
, Drain Current (A)
Current
6
8
VGS = -10V
10
12
7
14