IRF7379QTRPBF International Rectifier, IRF7379QTRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF7379QTRPBF
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7379QTRPBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 4.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7379QTRPBFCT

8
100
0.1
1000
10
0.00001
800
600
400
200
1
0
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
Fig 18. Typical Capacitance Vs.
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
-V
Drain-to-Source Voltage
DS
V
C
C
C
(THERMAL RESPONSE)
0.0001
GS
iss
rss
oss
, Drain-to-Source Voltage (V)
C
C
C
SINGLE PULSE
iss
oss
rss
= 0V,
= C
= C
= C
gs
ds
gd
+ C
+ C
10
gd
gd
f = 1MHz
, C
0.001
ds
SHORTED
t , Rectangular Pulse Duration (sec)
1
0.01
100
A
20
16
12
8
4
0
0.1
0
I
V
Fig 19. Typical Gate Charge Vs.
D
DS
= -3.0A
= -24V
Gate-to-Source Voltage
1. Duty factor D = t / t
2. Peak T = P
Notes:
Q , Total Gate Charge (nC)
5
G
1
J
10
DM
x Z
1
thJA
P
2
FOR TEST CIRCUIT
15
DM
SEE FIGURE 22
+ T
10
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A
t
1
t
2
20
100
25
A