SI1025X-T1-E3 Vishay, SI1025X-T1-E3 Datasheet

MOSFET P-CH DUAL 60V SOT563F

SI1025X-T1-E3

Manufacturer Part Number
SI1025X-T1-E3
Description
MOSFET P-CH DUAL 60V SOT563F
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1025X-T1-E3

Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
190mA
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
1.7nC @ 15V
Input Capacitance (ciss) @ Vds
23pF @ 25V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
4 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.19 A
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
5ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1025X-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1025X-T1-E3
Manufacturer:
ADI
Quantity:
14
Part Number:
SI1025X-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
Ordering Information: Si1025X-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
PRODUCT SUMMARY
V
D
S
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
1
1
2
DS (min)
- 60
1
2
3
(V)
Top View
SC-89
4 at V
R
DS(on)
b
GS
6
5
4
= - 10 V
()
J
a
D
G
S
= 150 °C)
2
1
2
P-Channel 60 V (D-S) MOSFET
V
- 1 to - 3.0
GS(th)
a
(V)
Marking Code: D
a
A
I
D
= 25 °C, unless otherwise noted)
- 500
(mA)
T
T
T
T
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
BENEFITS
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• High-Side Switching
• Low On-Resistance: 4 
• Low Threshold: - 2 V (typ.)
• Fast Switching Speed: 20 ns (typ.)
• Low Input Capacitance: 23 pF (typ.)
• Miniature Package
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
• Ease in Driving Switches
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven Without Buffer
• Small Board Area
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid State Relays
Symbol
T
Definition
Memories, Transistors etc.
J
ESD
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
stg
®
Power MOSFETs
- 200
- 145
- 450
280
145
5 s
- 55 to 150
- 650
2000
± 20
- 60
Steady State
- 190
- 135
- 380
250
130
Vishay Siliconix
Si1025X
www.vishay.com
Unit
mW
mA
°C
V
V
1

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SI1025X-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si1025X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a ...

Page 2

... Si1025X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Symbol Static V Drain-Source Breakdown Voltage V Gate Threshold Voltage GS(th) I Gate-Body Leakage I Zero Gate Voltage Drain Current a I On-State Drain Current D(on Drain-Source On-Resistance DS(on) a Forward Transconductance a V Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71433 S10-2432-Rev. C, 25-Oct- °C, unless otherwise noted 600 800 1000 1.2 1.5 1 ° °C J 0.9 1.2 1.5 Si1025X Vishay Siliconix iss oss 8 C rss Drain-to-Source Voltage (V) DS Capacitance 1.8 1 500 ...

Page 4

... Si1025X Vishay Siliconix TYPICAL CHARACTERISTICS ( Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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