SI1025X-T1-E3 Vishay, SI1025X-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1025X-T1-E3
• Description: MOSFET P-CH DUAL 60V SOT563F
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1025X-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 190mA
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 1.7nC @ 15V
• Input Capacitance (ciss) @ Vds: 23pF @ 25V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.19 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 5ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1025X-T1-E3TR

Si1025X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71433.
www.vishay.com
4
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
- 0.1
- 0.2
- 0.3
0.5
0.4
0.3
0.2
0.1
0.0
- 50
Threshold Voltage Variance Over Temperature
10
A
-2
= 25 °C, unless otherwise noted)
- 25
Square Wave Pulse Duration (s)
0
T
J
- Junction Temperature (°C)
25
10
-1
50
I
D
75
= 250 µA
100
1
125
150
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
A
t
1
= P
t
2
DM
S10-2432-Rev. C, 25-Oct-10
Z
Document Number: 71433
thJA
thJA
100
t
t
1
2
(t)
= 500 °C/W
6
0
0