SI1563DH-T1-E3 Vishay, SI1563DH-T1-E3 Datasheet
SI1563DH-T1-E3
Specifications of SI1563DH-T1-E3
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SI1563DH-T1-E3 Summary of contents
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... Top View Ordering Information: Si1563DH-T1-E3 (Lead (Pb)-free) Si1563DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si1563DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71963 S10-1054-Rev. B, 03-May- 1.5 2.0 0.9 1.2 1.5 Si1563DH Vishay Siliconix 2 ° °C 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 160 120 C iss oss ...
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... Si1563DH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 100 µA D 0.1 0.0 - 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 75 100 125 150 ...
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... Single Pulse 0. Document Number: 71963 S10-1054-Rev. B, 03-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1563DH Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 170 °C/W thJA ( ...
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... Si1563DH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3 thru 3.5 V 2.5 2.0 1.5 1.0 0.5 0 Drain-to-Source Voltage (V) DS Output Characteristics 0.8 0.4 0.0 0.0 0.5 1.0 1 Drain Current (A) D On-Resistance vs. Drain Current 0 0.0 0.3 0 Total Gate Charge (nC) ...
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... I DM Limited DS(on D(on) Limited 0 °C A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si1563DH Vishay Siliconix 1 0. 1.2 0.8 0.4 0 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.01 0 Time (s) Single Pulse Power, Junction-to-Ambient Limited P( ...
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... Si1563DH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...