SI4908DY-T1-E3 Vishay, SI4908DY-T1-E3 Datasheet
SI4908DY-T1-E3
Specifications of SI4908DY-T1-E3
Available stocks
Related parts for SI4908DY-T1-E3
SI4908DY-T1-E3 Summary of contents
Page 1
... Top View Ordering Information: Si4908DY-T1-E3 (Lead (Pb)-free) Si4908DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...
Page 2
... Si4908DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
Page 3
... Q – Total Gate Charge (nC) g Gate Charge Document Number: 73698 S09-0540-Rev. B, 06-Apr- thru 2.0 2.5 3 7.5 10.0 12.5 Si4908DY Vishay Siliconix 1.2 1.0 0.8 0 125 0.2 0.0 0.0 0.5 1.0 1.5 2.0 V – Gate-to-Source Voltage (V) GS Transfer Characteristics ...
Page 4
... Si4908DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 0.1 0.01 0 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0 0 – Temperature ( C) J Threshold Voltage www.vishay.com 0.8 1.0 1 250 µA 75 100 125 150 ...
Page 5
... T – Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4908DY Vishay Siliconix 125 150 1.25 1.00 0.75 0.50 0.25 0. 100 T – Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www ...
Page 6
... Si4908DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
Page 7
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...