SI4908DY-T1-E3 Vishay, SI4908DY-T1-E3 Datasheet
SI4908DY-T1-E3
Specifications of SI4908DY-T1-E3
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SI4908DY-T1-E3 Summary of contents
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... Top View Ordering Information: Si4908DY-T1-E3 (Lead (Pb)-free) Si4908DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...
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... Si4908DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... Q – Total Gate Charge (nC) g Gate Charge Document Number: 73698 S09-0540-Rev. B, 06-Apr- thru 2.0 2.5 3 7.5 10.0 12.5 Si4908DY Vishay Siliconix 1.2 1.0 0.8 0 125 0.2 0.0 0.0 0.5 1.0 1.5 2.0 V – Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... Si4908DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 0.1 0.01 0 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0 0 – Temperature ( C) J Threshold Voltage www.vishay.com 0.8 1.0 1 250 µA 75 100 125 150 ...
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... T – Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4908DY Vishay Siliconix 125 150 1.25 1.00 0.75 0.50 0.25 0. 100 T – Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www ...
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... Si4908DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... BSC 5.80 6.20 0.25 0.50 0.50 0.93 0° 8° 0.44 0.64 Package Information Vishay Siliconix H C All Leads 0.101 mm q 0.004" INCHES Min Max 0.053 0.069 0.004 0.008 0.014 0.020 0.010 0.189 0.196 ...
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... See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad ...
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... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...
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