SI4908DY-T1-E3 Vishay, SI4908DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4908DY-T1-E3
• Description: MOSFET N-CH DUAL 40V 5A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4908DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 355pF @ 20V
• Power - Max: 1.85W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 2.2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4908DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73698
S09-0540-Rev. B, 06-Apr-09
0.08
0.07
0.06
0.05
0.04
0.03
20
16
12
10
On-Resistance vs. Drain Current and Gate Voltage
8
4
0
8
6
4
2
0
0.0
0.0
0
I
D
= 5 A
V
V
GS
DS
0.5
2.5
4
V
= 4.5 V
= 20 V
DS
V
Q
Output Characteristics
DS
V
g
– Drain-to-Source Voltage (V)
GS
I
1.0
D
= 10 V
– Total Gate Charge (nC)
= 10 V
– Drain Current (A)
Gate Charge
5.0
8
V
1.5
DS
V
GS
= 30 V
12
7.5
= 10 V thru 4 V
2.0
3 V
10.0
16
2.5
12.5
3.0
20
550
500
450
400
350
300
250
200
150
100
2.1
1.8
1.5
1.2
0.9
0.6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
I
D
- 25
= 5 A
0.5
V
V
8
DS
GS
T
Transfer Characteristics
J
0
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
C
1.0
rss
Capacitance
25
T
16
C
= 125 C
25 C
C
1.5
50
Vishay Siliconix
iss
C
oss
24
V
75
GS
Si4908DY
2.0
= 4.5 V
www.vishay.com
100
32
2.5
V
GS
125
- 55 C
= 10 V
150
3.0
40
3