SI4908DY-T1-E3 Vishay, SI4908DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4908DY-T1-E3
• Description: MOSFET N-CH DUAL 40V 5A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4908DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 355pF @ 20V
• Power - Max: 1.85W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 2.2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4908DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73698
S09-0540-Rev. B, 06-Apr-09
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Power Derating, Junction-to-Foot
25
D
T
is based on T
C
– Case Temperature (°C)
50
75
J(max)
6
5
4
3
2
1
0
100
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
25
T
C
Current Derating*
150
50
– Case Temperature (°C)
75
100
1.25
1.00
0.75
0.50
0.25
0.00
125
0
Power Derating, Junction-to-Ambient
150
25
T
A
– Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si4908DY
www.vishay.com
125
150
5