SI3586DV-T1-E3 Vishay, SI3586DV-T1-E3 Datasheet
SI3586DV-T1-E3
Specifications of SI3586DV-T1-E3
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SI3586DV-T1-E3 Summary of contents
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... GS TSOP-6 Top View 2.85 mm Ordering Information: Si3586DV-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...
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... Si3586DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
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... On-Resistance vs. Drain Current 3 Total Gate Charge (nC) g Gate Charge Document Number: 72310 S-60422-Rev. C, 20-Mar-06 New Product 1 Si3586DV Vishay Siliconix 125 ° ° °C 0 0.00 0.25 0.50 0.75 1.00 1.25 1. Gate-to-Source Voltage (V) GS Transfer Characteristics 600 500 C iss 400 300 200 C oss ...
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... Si3586DV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 150 ° 0.1 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.1 0.0 - 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.25 0.20 0.15 0. °C J 0.05 ...
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... Single Pulse 0. Document Number: 72310 S-60422-Rev. C, 20-Mar-06 New Product - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si3586DV Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 130 °C/W thJA ( ...
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... Si3586DV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted thru 2 Drain-to-Source Voltage (V) DS Output Characteristics 0.75 0.60 0. 0.15 0. Drain Current (A) D On-Resistance vs. Drain Current 6 2 5.2 3.9 2.6 1.3 0 Total Gate Charge (nC) g Gate Charge www.vishay.com 6 New Product 1.5 V ...
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... Limited by r DS(on °C C Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si3586DV Vishay Siliconix 0.5 0 0.2 0.1 0 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.01 0.1 1 Time (sec) Single Pulse Power (Junction-to-Ambient) ...
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... Si3586DV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...