SI3586DV-T1-E3 Vishay, SI3586DV-T1-E3 Datasheet - Page 8

MOSFET N/P-CH 20V 2.9/2.1A 6TSOP

SI3586DV-T1-E3

Manufacturer Part Number
SI3586DV-T1-E3
Description
MOSFET N/P-CH 20V 2.9/2.1A 6TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI3586DV-T1-E3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 3.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.9A, 2.1A
Vgs(th) (max) @ Id
1.1V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.06 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.9 A @ N Channel or 2.1 A @ P Channel
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
2.9A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
47mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
1.1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3586DV-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3586DV-T1-E3
Manufacturer:
VISHAY
Quantity:
3 000
Part Number:
SI3586DV-T1-E3
Manufacturer:
ROHM
Quantity:
538
Part Number:
SI3586DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3586DV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72310.
www.vishay.com
8
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Single Pulse
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
New Product
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
-2
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
1
= P
S-60422-Rev. C, 20-Mar-06
t
Document Number: 72310
2
DM
Z
thJA
thJA
100
(t)
t
t
1
2
= 130 °C/W
600
10

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