IRF7350TRPBF International Rectifier, IRF7350TRPBF Datasheet

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IRF7350TRPBF

Manufacturer Part Number
IRF7350TRPBF
Description
MOSFET N/P-CH 100V 2.1A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7350TRPBF.pdf (16 pages)

Specifications of IRF7350TRPBF

Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2W
Fet Type
N and P-Channel
Gate Charge (qg) @ Vgs
28nC @ 10V
Vgs(th) (max) @ Id
4V @ 250µA
Current - Continuous Drain (id) @ 25° C
2.1A, 1.5A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 2.1A, 10V
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
2.1 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
19 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF7350TRPBF
Manufacturer:
NS/TI
Quantity:
3
Absolute Maximum Ratings
Thermal Resistance
Description
These dual N and P channel HEXFET
Rectifier utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
well known for, provides the designer with an extremely efficient and reliable
device for use in DC motor drives and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety
of power applications. With these improvements, multiple devices can be
used in an application with dramatically reduced board space. The package
is designed for vapor phase, infra red, or wave soldering techniques.
T
V
I
I
I
P
E
V
dv/dt
Symbol
R
R
www.irf.com
l
l
l
l
D
D
DM
J,
DS
D
AS
GS
@ T
@ T
JL
JA
T
@T
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape and Reel
STG
A
A
A
= 25°C
= 70°C
= 25°C
Drain-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
Parameter
ƒ
®
power MOSFETs from International
‚
GS
GS
@ 10V
@ 10V
„
®
power MOSFETs are
G 2
G 1
S 2
S 1
N - C H A N N EL M O S FE T
P -C H A N N E L M O S F E T
1
2
3
4
T op V iew
N-Channel
± 20
100
2.1
1.7
8.4
4.0
35
Typ.
–––
–––
HEXFET
-55 to + 150
8
6
5
7
D 1
D 1
D 2
Max.
0.016
D 2
2.0
R
V
®
DS(on)
DSS
Power MOSFET
P-Channel
Max.
62.5
20
-100
± 20
-1.5
-1.2
-6.0
4.3
51
0.21
N-Ch
100V
IRF7350
SO-8
PD - 94226B
-100V
P-Ch
0.48
Units
°C/W
Units
W/°C
V/ns
°C
mJ
W
A
V
1
08/09/01

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IRF7350TRPBF Summary of contents

Page 1

Ultra Low On-Resistance l l Dual N and P Channel MOSFET Surface Mount l Available in Tape and Reel l Description These dual N and P channel HEXFET Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ...

Page 2

IRF7350 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 7.0V 6.0V 5.5V 10 5.0V 4.5V BOTTOM 4.0V 1 0.1 20µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10. 150°C ...

Page 4

IRF7350 10000 0V MHZ C iss = rss = oss = 1000 Ciss Coss 100 Crss 10 ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.1 ...

Page 6

IRF7350 0.40 0. 2.1A 0.20 0.10 0.00 4.5 6.0 7.5 9.0 10.5 V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 4.0 3 250µA 3.0 2.5 2.0 -75 -50 ...

Page 7

Starting T , Junction Temperature J Fig 16a. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA ...

Page 8

IRF7350 10 Duty Cycle = Single Pulse 1 0.01 0.05 0.1 0.10 0.01 0.001 1.0E-06 1.0E-05 1.0E-04 Fig 19. Typical Avalanche Current Vs.Pulsewidth 40 TOP Single Pulse BOTTOM 10% Duty Cycle 4. ...

Page 9

VGS TOP -15V -10V -7.0V -6.0V 10 -5.5V -5.0V -4.5V BOTTOM -4.0V 1 0.1 -4.0V 0.01 20µs PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 21. Typical Output Characteristics 10.00 1.00 T ...

Page 10

IRF7350 10000 0V MHZ C iss = rss = oss = 1000 Ciss Coss 100 Crss 10 ...

Page 11

T , Case Temperature C Fig 29. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.1 ...

Page 12

IRF7350 0.80 0.70 0. -1.5A 0.50 0.40 0.30 5.0 7.0 9.0 11.0 -V GS, Gate -to -Source Voltage (V) Fig 31. Typical On-Resistance Vs. Gate Voltage 4.0 3 -250µA 3.0 2.5 2.0 -75 -50 ...

Page 13

Starting T , Junction Temperature J Fig 35a. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. ...

Page 14

IRF7350 10 Duty Cycle = Single Pulse 1 0.01 0.05 0.1 0.10 0.01 0.001 1.0E-06 1.0E-05 1.0E-04 Fig 38. Typical Avalanche Current Vs.Pulsewidth 60 TOP Single Pulse BOTTOM 10% Duty Cycle -3. ...

Page 15

SO-8 Package Details 0.25 [.010 NOT DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. ...

Page 16

IRF7350 SO-8 Tape and Reel . . ...

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