IRF7342PBF International Rectifier, IRF7342PBF Datasheet

MOSFET 2P-CH 55V 3.4A 8-SOIC

IRF7342PBF

Manufacturer Part Number
IRF7342PBF
Description
MOSFET 2P-CH 55V 3.4A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF7342PBF

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
-3.4 A
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2 W
Resistance, Drain To Source On
0.105 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Voltage, Breakdown, Drain To Source
-55 V
Voltage, Drain To Source
–55 V
Voltage, Gate To Source
±20 V
Configuration
Dual
Transistor Polarity
Dual P-Channel
Resistance Drain-source Rds (on)
0.105 Ohms
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 3.4 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
22 ns
Gate Charge Qg
26 nC
Minimum Operating Temperature
- 55 C
Rise Time
10 ns
Module Configuration
Dual
Continuous Drain Current Id
-3.4A
Drain Source Voltage Vds
-55V
On Resistance Rds(on)
105mohm
Rds(on) Test Voltage Vgs
-10V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7342PBF
Quantity:
3 002
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
l
l
l
l
www.irf.com
R
V
I
I
I
P
P
V
V
E
dv/dt
T
D
D
DM
J,
DS
D
D
GS
GSM
AS
θJA
@ T
@ T
@T
@T
T
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
STG
C
C
C
C
= 25°C
= 70°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G2
G1
S2
S1
1
2
3
4
Top View
Typ.
–––
HEXFET
8
7
6
5
-55 to + 150
IRF7342PbF
Max.
0.016
D1
D1
D2
-3.4
-2.7
± 20
114
D2
-55
-27
2.0
1.3
5.0
30
SO-8
®
R
DS(on)
Power MOSFET
V
Max.
62.5
DSS
= 0.105Ω
= -55V
PD - 95200
Units
Units
W/°C
°C/W
V/ns
°C
V
A
V
V
1

Related parts for IRF7342PBF

IRF7342PBF Summary of contents

Page 1

... Gate-to-Source Voltage GS V Gate-to-Source Voltage Single Pulse tp<10µs GSM E Single Pulse Avalanche Energy‚ AS dv/dt Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com IRF7342PbF HEXFET Top View Max. @ 10V GS @ 10V GS ...

Page 2

... IRF7342PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge gd t Turn-On Delay Time ...

Page 3

... PULSE WIDTH Gate-to-Source Voltage (V) GS www.irf.com 100 TOP BOTTOM 10 1 ° 0.1 0.1 100 100 150 C ° -25V 0.1 0 IRF7342PbF VGS -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V -3.0V -3.0V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage ( 150 C ° J ° ...

Page 4

... IRF7342PbF 2.0 -3 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J 0.45 0. 0.15 0. Gate-to-Source Voltage ( 0.240 0.200 0.160 0.120 V = -10V GS 0.080 0 80 100 120 140 160 ° 300 250 200 150 100 Starting T , Junction Temperature ( C) VGS = -4.5V VGS = -10V Drain Current (A) ...

Page 5

... Drain-to-Source Voltage (V) DS 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 www.irf.com SHORTED 100 0 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7342PbF -3.1A V =-48V DS V =-30V DS V =-12V Total Gate Charge (nC Notes: 1. Duty factor Peak thJA 100 ...

Page 6

... IRF7342PbF SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010] NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . ...

Page 7

... FEED DIRECTION 330.00 (12.992) MAX. Data and specifications subject to change without notice. Qualifications Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.10/04 IRF7342PbF 12.3 ( .484 ) 11.7 ( .461 ) 14.40 ( .566 ) 12.40 ( .488 ) TAC Fax: (310) 252-7903 7 ...

Related keywords