IRF7910TRPBF International Rectifier, IRF7910TRPBF Datasheet

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IRF7910TRPBF

Manufacturer Part Number

IRF7910TRPBF

Description

MOSFET DUAL N-CH 12V 10A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7910TRPBF.pdf (8 pages)

Specifications of IRF7910TRPBF

Package / Case

8-SOIC (3.9mm Width)

Mounting Type

Surface Mount

Power - Max

2W

Fet Type

2 N-Channel (Dual)

Gate Charge (qg) @ Vgs

26nC @ 4.5V

Vgs(th) (max) @ Id

2V @ 250µA

Current - Continuous Drain (id) @ 25° C

10A

Drain To Source Voltage (vdss)

12V

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

15 mOhm @ 8A, 4.5V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IRF7910TRPBF

Manufacturer:

IR

Quantity:

20 000

Company:

H&T Electronics

H&T Electronics

Part Number:

IRF7910TRPBF

Quantity:

9 000

Company:

H&T Electronics

H&T Electronics

Part Number:

IRF7910TRPBF

Quantity:

25 780

Current page: 1 of 8
Download datasheet (219Kb)

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Applications

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Absolute Maximum Ratings

Thermal Resistance

Benefits

www.irf.com

Symbol

R

R

Notes through

Symbol

V

V

I

I

I

P

P

T

D

D

DM

J

DS

GS

D

D

θJL

θJA

and Current

@ T

@ T

Computing and Portable Applications

, T

Power Management for Netcom,

Lead-Free

High Frequency 3.3V and 5V input Point-

Ultra-Low Gate Impedance

Very Low R

Fully Characterized Avalanche Voltage

of-Load Synchronous Buck Converters for

Netcom and Computing Applications

@T

@T

STG

A

A

A

A

= 25°C

= 70°C

= 25°C

= 70°C

DS(on)

Drain-Source Voltage

Continuous Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Maximum Power Dissipation

Junction and Storage Temperature Range

Junction-to-Drain Lead

Junction-to-Ambient

Linear Derating Factor

Gate-to-Source Voltage

„

are on page 8

Parameter

Parameter

„

GS

GS

„

„

@ 4.5V

@ 4.5V

G2

G1

S2

S1

V

12V

DSS

1

2

3

4

Top View

Typ.

–––

–––

HEXFET

15mΩ @V

8

7

6

5

IRF7910PbF

R

-55 to + 150

DS(on)

D1

D1

D2

D2

Max.

± 12

7.9

2.0

1.3

12

10

79

16

®

GS

max

Power MOSFET

= 4.5V

Max.

62.5

42

SO-8

10A

mW/°C

I

Units

Units

°C/W

D

°C

W

W

V

A

V

1

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