IRF7910TRPBF International Rectifier, IRF7910TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7910TRPBF
• Description: MOSFET DUAL N-CH 12V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7910TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Vgs(th) (max) @ Id: 2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 10A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 8A, 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7910PbF
4
10000
100.0
1000
10.0
100
1.0
0.1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
Coss
Ciss
Crss
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
1000
100
12
10
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0
Fig 6. Typical Gate Charge Vs.
0
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 8.0A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
V DS = 9.6V
V DS = 6.0V
20
FOR TEST CIRCUIT
SEE FIGURE 13
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10
30
10msec
1msec
100µsec
100
40