IRF7325PBF International Rectifier, IRF7325PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7325PBF
• Description: MOSFET 2P-CH 12V 7.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7325PBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2020pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Resistance Drain-source Rds (on): 24 m Ohms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 7.8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 180 ns
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 9.8 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
100
0.1
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
1.0
0.1
T = 150 C
TOP
BOTTOM
J
-V
-V
DS
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
GS
°
T = 25 C
J
1.5
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
°
2.0
1
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
-1.2V
DS
J
= -10V
2.5
°
3.0
10
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
0.1
10
1
-60 -40 -20
Fig 4. Normalized On-Resistance
0.1
I =
TOP
BOTTOM
D
-7.8A
-V
DS
T , Junction Temperature ( C)
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
20 40 60 80 100 120 140 160
IRF7325PbF
1
-1.2V
20µs PULSE WIDTH
T = 150 C
J
°
V
°
GS
=
-4.5V
3
10