IRF7325PBF International Rectifier, IRF7325PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7325PBF
• Description: MOSFET 2P-CH 12V 7.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7325PBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2020pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Resistance Drain-source Rds (on): 24 m Ohms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 7.8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 180 ns
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 9.8 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7325PbF
3000
2500
2000
1500
1000
4
500
100
0
0.1
10
1
Fig 5. Typical Capacitance Vs.
1
0.2
Fig 7. Typical Source-Drain Diode
Drain-to-Source Voltage
T = 150 C
Coss
Crss
J
Ciss
-V
-V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
0.6
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
T = 25 C
J
°
1.0
10
f = 1 MHZ
1.4
V
GS
SHORTED
= 0 V
1.8
100
100
10
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
A
J
= 25 C
= 150 C
-7.8A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
DS
10
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
1
20
BY R
V
V
DS
DS
=-9.6V
=-6V
DS(on)
30
www.irf.com
10
100us
1ms
10ms
40
100
50