GWM120-0075X1-SMD IXYS, GWM120-0075X1-SMD Datasheet

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GWM120-0075X1-SMD

Manufacturer Part Number
GWM120-0075X1-SMD
Description
IC FULL BRIDGE 3PH ISOPLUS SMD
Manufacturer
IXYS
Datasheet

Specifications of GWM120-0075X1-SMD

Fet Type
6 N-Channel (3-Phase Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.9 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
115nC @ 10V
Mounting Type
Surface Mount
Package / Case
Surface Mount
Vdss, Max, (v)
75
Id25, Tc = 25°c, (a)
110
Id80, Tc = 80°c, (a)
-
Id90, Tc = 90°c, (a)
85
Rds(on), Max, Tj = 25°c, (mohms)
4.9
Tf, Typ, (ns)
100
Tr, Typ, (ns)
100
Rthjc, Max, (ºc/w)
1.0
Package Style
ISOPLUS-DIL™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
MOSFETs
Symbol
V
V
I
I
I
I
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
E
E
E
R
R
DSS
GSS
D25
D90
F25
F90
d(on)
r
d(off)
f
GS(th)
GS
on
off
recoff
DSS
DSon
thJC
thJH
g
gs
gd
Conditions
T
T
T
T
T
Conditions
on chip level at
V
V
V
V
V
V
I
inductive load
with heat transfer paste (IXYS test setup)
D
VJ
C
C
C
C
GS
DS
DS
GS
GS
GS
= 80 A; R
= 25°C
= 90°C
= 25°C (diode)
= 90°C (diode)
= 25°C to 150°C
= V
= 10 V ; I
= 20 V; I
= ± 20 V; V
= 10 V; V
= 10 V; V
DSS
; V
G
D
D
GS
DS
DS
= 39 Ω
= 60 A
= 1 mA
DS
= 0 V
= 36 V; I
= 30 V
= 0 V
D
= 25 A
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
(T
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
G1
S1
G2
S2
VJ
= 25°C, unless otherwise specified)
min.
G3
G4
S4
S3
2
Characteristic Values
Maximum Ratings
0.20
0.50
0.01
typ.
115
130
100
500
100
4.0
7.2
0.1
1.3
30
30
G5
G6
S6
S5
max.
± 20
110
110
4.9
8.4
0.2
1.0
1.6
75
85
80
4
1
K/W
K/W
mW
mW
mA
mJ
mJ
mJ
nC
nC
nC
µA
µA
ns
ns
ns
ns
L+
L1
L2
L3
L-
V
V
A
A
A
A
V
V
I
R
Applications
AC drives
• in automobiles
• in industrial vehicles
• in battery supplied equipment
Features
• MOSFETs in trench technology:
• package:
• Space and weight savings
Package options
• 2 lead forms available
D25
- electric power steering
- starter generator
- propulsion drives
- fork lift drives
- low RDSon
- optimized intrinsic reverse diode
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
- isolated DCB ceramic base plate
- straight leads (SL)
- SMD lead version (SMD)
DSS
DSon typ.
connections
with optimized heat transfer
Straight leads
GWM 120-0075X1
= 4.0 mW
= 75 V
= 110 A
Surface Mount Device
20110407d
1 - 6

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GWM120-0075X1-SMD Summary of contents

Page 1

... inductive load off E recoff R thJC R with heat transfer paste (IXYS test setup) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Maximum Ratings ± 20 Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...

Page 2

... C coupling capacity between shorted P pins and mounting tab in the case Weight typ. IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...

Page 3

... Part Name & Leads Ordering Packing Unit Marking Straight Standard GWM 120-0075X1 - SL SMD Standard GWM 120-0075X1 - SMD IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved L eads GWM 120-0075X1-SL 37,5 +0,20 5 ±0,05 (11x) 3 ±0,05 1 ±0,05 1,5 1 ± ...

Page 4

... 125 A D 1,6 R normalized 1,2 DS(on) 0,8 0,4 - [°C] J Fig. 5 Drain source on-state resistance R versus junction temperature T IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 100 125 150 DSS 25° DS(on) ...

Page 5

... E rec(off) 0. [Ω] G Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 140 120 100 100 120 140 200 1.0 0.9 160 ...

Page 6

... Fig. 15 Reverse recovery charge Q of the body diode vs. di d(on) r Fig. 17 Definition of switching times IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 125 A 80A 40 A 1200 1400 rr 125 A 80A 40 A 1200 1400 0.1 I ...

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