GWM120-0075X1-SMD IXYS, GWM120-0075X1-SMD Datasheet - Page 2

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GWM120-0075X1-SMD

Manufacturer Part Number
GWM120-0075X1-SMD
Description
IC FULL BRIDGE 3PH ISOPLUS SMD
Manufacturer
IXYS
Datasheet

Specifications of GWM120-0075X1-SMD

Fet Type
6 N-Channel (3-Phase Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.9 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
115nC @ 10V
Mounting Type
Surface Mount
Package / Case
Surface Mount
Vdss, Max, (v)
75
Id25, Tc = 25°c, (a)
110
Id80, Tc = 80°c, (a)
-
Id90, Tc = 90°c, (a)
85
Rds(on), Max, Tj = 25°c, (mohms)
4.9
Tf, Typ, (ns)
100
Tr, Typ, (ns)
100
Rthjc, Max, (ºc/w)
1.0
Package Style
ISOPLUS-DIL™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Source-Drain Diode
Symbol
V
t
Q
I
Component
Symbol
I
T
T
V
F
Symbol
R
C
Weight
RM
rr
RMS
SD
VJ
stg
C
RM
ISOL
pin to chip
P
Conditions
(diode) I
I
V
Conditions
per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
I
mounting force with clip
Conditions
with heatsink compound
coupling capacity between shorted
pins and mounting tab in the case
typ.
F
ISOL
R
= 80 A; -di
= 30 V; T
< 1 mA, 50/60 Hz, f = 1 minute
F
= 80 A; V
J
F
/dt = 800 A/µs
= 125°C
GS
= 0 V
(T
J
= 25°C, unless otherwise specified)
min.
min.
Characteristic Values
Characteristic Values
Maximum Ratings
typ.
typ.
160
0.9
0.9
0.6
55
30
25
-55...+175
-55...+125
50 - 250
max.
1000
max.
300
1.2
mW
µC
V~
pF
°C
°C
ns
N
V
A
A
g
GWM 120-0075X1
20110407d
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