SSM6N37CTD(TPL3) Toshiba, SSM6N37CTD(TPL3) Datasheet
SSM6N37CTD(TPL3)
Specifications of SSM6N37CTD(TPL3)
Related parts for SSM6N37CTD(TPL3)
SSM6N37CTD(TPL3) Summary of contents
Page 1
... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
Page 2
Electrical Characteristics Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Switching time Turn-off time Drain-source forward voltage Note 2: Pulse test ...
Page 3
Q2 Common) I – 500 10 V 400 4.5 V 300 200 100 0 0 0.2 0.4 0.6 Drain-source voltage V R – (ON ...
Page 4
Q2 Common – 1000 Common Source 25°C 300 100 Drain current – 100 Common ...
Page 5
... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...