NTZD3155CT2G ON Semiconductor, NTZD3155CT2G Datasheet

MOSFET N/P-CH COMPL 20V SOT-563

NTZD3155CT2G

Manufacturer Part Number
NTZD3155CT2G
Description
MOSFET N/P-CH COMPL 20V SOT-563
Manufacturer
ON Semiconductor
Datasheet
1.NTZD3155CT2G.pdf (8 pages)

Specifications of NTZD3155CT2G

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
550 mOhm @ 540mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
540mA, 430mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
2.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
150pF @ 16V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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NTZD3155C
Small Signal MOSFET
Complementary 20 V, 540 mA / -430 mA,
with ESD protection, SOT-563 package.
Features
•
•
•
•
•
•
Applications
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq. pad size
© Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 2
MAXIMUM RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
N-Channel
Continuous Drain
Current (Note 1)
P-Channel
Continuous Drain
Current (Note 1)
Power Dissipation
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
Leading Trench Technology for Low R
High Efficiency System Performance
Low Threshold Voltage
ESD Protected Gate
Small Footprint 1.6 x 1.6 mm
These are Pb-Free Devices
DC-DC Conversion Circuits
Load/Power Switching with Level Shift
Single or Dual Cell Li-Ion Battery Operated Systems
High Speed Circuits
Cell Phones, MP3s, Digital Cameras, and PDAs
(Cu area = 1.127 in sq [1 oz] including traces).
(Note 1)
(1/8” from case for 10 s)
Parameter
N-Channel
P-Channel
(T
Steady
t v 5 s
Steady
t v 5 s
Steady
t v 5 s
J
State
State
State
= 25°C unless otherwise specified)
T
T
T
T
T
T
T
t
p
A
A
A
A
A
A
A
= 10 ms
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
DS(on)
Symbol
V
T
V
Performance
I
P
T
DSS
STG
T
I
DM
I
GS
D
S
J
D
L
,
-55 to
Value
-430
-310
-455
1500
-750
540
390
570
250
280
150
350
260
20
±6
1
Unit
mW
mA
mA
mA
°C
°C
V
V
†For information on tape and reel specifications,
NTZD3155CT1G
NTZD3155CT2G
NTZD3155CT5G
N-Channel
P-Channel
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
(BR)DSS
-20 V
20 V
(Note: Microdot may be in either location)
Device
6
G
D
CASE 463A
S
SOT-563-6
2
1
1
TW
M
G
ORDERING INFORMATION
1
1
2
3
http://onsemi.com
PINOUT: SOT-563
0.5 W @ -4.5 V
0.6 W @ -2.5 V
1.0 W @ -1.8 V
0.4 W @ 4.5 V
0.5 W @ 2.5 V
0.7 W @ 1.8 V
= Specific Device Code
= Date Code
= Pb-Free Package
R
(Pb-Free)
(Pb-Free)
(Pb-Free)
SOT-563
SOT-563
SOT-563
Package
DS(on)
Top View
Publication Order Number:
Typ
4000 / Tape & Reel
4000 / Tape & Reel
8000 / Tape & Reel
MARKING
DIAGRAM
TW M G
6
5
4
Shipping
NTZD3155C/D
G
-430 mA
(Note 1)
540 mA
I
D
Max
D
G
S
2
1
2
†

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NTZD3155CT2G Summary of contents

Page 1

... J T 150 STG I 350 mA S NTZD3155CT1G °C 260 T L NTZD3155CT2G NTZD3155CT5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com I Max D R Typ (Note 1) DS(on) 0 4.5 V ...

Page 2

Thermal Resistance Ratings Parameter Junction-to-Ambient – Steady State (Note 2) Junction-to-Ambient – (Note 2) 2. Surface mounted on FR4 board using pad size (Cu area = 1.127 oz] including traces). ...

Page 3

ELECTRICAL CHARACTERISTICS (T Parameter Symbol CHARGES, CAPACITANCES AND GATE RESISTANCE Total Gate Charge Q Threshold Gate Charge Q Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Q Threshold Gate Charge Q Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS ( (Note ...

Page 4

N-CHANNEL TYPICAL PERFORMANCE CURVES 1.2 5.5 V 1 0 1.0 ...

Page 5

N-CHANNEL TYPICAL PERFORMANCE CURVES 200 150 100 OSS DRAIN-T O-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 100 ...

Page 6

P-CHANNEL TYPICAL PERFORMANCE CURVES 25° -1 0.6 -1.4 V 0.4 -1 ...

Page 7

P-CHANNEL TYPICAL PERFORMANCE CURVES 250 200 C 150 ISS 100 C OSS 50 C RSS DRAIN-T O-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 100 t d(OFF ...

Page 8

... Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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